Parametric results for: BF1100R under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

LOW NOISE 6

9 hits Apply

SOURCE 6

9 hits Apply

Configuration (3)

COMPLEX 4 SINGLE 3 SINGLE WITH BUILT-IN DIODE 2

9 hits Apply

DS Breakdown Voltage-Min (1)

14 V 6

9 hits Apply

Drain Current-Max (ID) (1)

30 mA 9

9 hits Apply

METAL-OXIDE SEMICONDUCTOR 9

9 hits Apply

0.035 pF 6

9 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 6

9 hits Apply

R-PDSO-G4 6

9 hits Apply

e3 4

9 hits Apply

Manufacturer (2)

NXP Semiconductors 7 Philips Semiconductors 2

9 hits Apply

Number of Elements (2)

1 5 2 4

Min - Max

9 hits Apply

Number of Terminals (1)

4 6

9 hits Apply

DUAL GATE, ENHANCEMENT MODE 6

9 hits Apply

150.0 °C 9

9 hits Apply

PLASTIC/EPOXY 6

9 hits Apply

RECTANGULAR 6

9 hits Apply

SMALL OUTLINE 6

9 hits Apply

Obsolete 7 Transferred 2

9 hits Apply

Yes 1

9 hits Apply

260 3

9 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 9

9 hits Apply

Surface Mount (1)

YES 9

9 hits Apply