Parametric results for: BD643 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 28

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Collector Current-Max (IC) (1)

8 A 50

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Collector-Emitter Voltage-Max (4)

45 V 29 60 V 4 80 V 4 100 V 1

Min (V) - Max (V)

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Configuration (3)

DARLINGTON 12 DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 28 SINGLE 10

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DC Current Gain-Min (hFE) (1)

750.0 50

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TO-220AB 29

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R-PSFM-T3 29

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e0 10

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Manufacturer (13)

Baneasa SA 1 Comset Semiconductor 1 General Electric Solid State 1 Harris Semiconductor 15 Inchange Semiconductor Company Ltd 1 Infineon Technologies AG 1 Intersil Corporation 15 New Jersey Semiconductor Products Inc 10 North American Philips Discrete Products Div 2 Philips Semiconductors 2 Thomson Consumer Electronics 1 TT Electronics Power and Hybrid / Semelab Limited 1 TT Electronics Resistors 1

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Number of Elements (1)

1 39

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Number of Terminals (1)

3 29

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150.0 °C 39

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PLASTIC/EPOXY 29

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RECTANGULAR 29

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FLANGE MOUNT 29

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Active 10 Contact Manufacturer 2 Obsolete 37 Transferred 3

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Polarity/Channel Type (2)

NPN 47 PNP 3

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62.5 W 28

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20 W 2 62 W 8 62.5 W 1

Min (W) - Max (W)

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Surface Mount (1)

NO 40

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Transition Frequency-Nom (fT) (3)

7 MHz 1 10 MHz 28 100 MHz 8

Min (MHz) - Max (MHz)

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