Parametric results for: BCR583E6327 under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

BUILT-IN BIAS RESISTOR RATIO IS 1 4

5 hits Apply

Collector Current-Max (IC) (1)

500 mA 4

5 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 4

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN RESISTOR 4

5 hits Apply

DC Current Gain-Min (hFE) (1)

70.0 4

5 hits Apply

R-PDSO-G3 4

5 hits Apply

e3 3

5 hits Apply

Manufacturer (3)

Infineon Technologies AG 3 Rochester Electronics LLC 1 Siemens 1

5 hits Apply

1 2 NOT SPECIFIED 1

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

3 4

5 hits Apply

150.0 °C 1

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Active 1 End Of Life 3 Transferred 1

5 hits Apply

Yes 3

5 hits Apply

260 2 NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

PNP 4

5 hits Apply

330 mW 1

5 hits Apply

330 mW 1

5 hits Apply

Surface Mount (1)

YES 4

5 hits Apply

Transition Frequency-Nom (fT) (1)

150 MHz 4

5 hits Apply