Parametric results for: BB503C under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount

LOW NOISE 2

3 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

6 V 2

3 hits Apply

Drain Current-Max (ID) (1)

20 mA 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

0.05 pF 2

3 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 2

3 hits Apply

R-PDSO-G4 3

3 hits Apply

e0 1

3 hits Apply

Manufacturer (2)

Hitachi Ltd 1 Renesas Electronics Corporation 2

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

4 3

3 hits Apply

DEPLETION MODE 1 DUAL GATE, ENHANCEMENT MODE 1

3 hits Apply

150.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Obsolete 2 Transferred 1

3 hits Apply

No 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

100 mW 2

3 hits Apply

Power Gain-Min (Gp) (1)

17.0 dB 2

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply