Parametric results for: BB303M under RF Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Gain-Min (Gp) Surface Mount

SOURCE 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

7 V 2

2 hits Apply

Drain Current-Max (ID) (1)

25 mA 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

0.05 pF 2

2 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 2

2 hits Apply

R-PDSO-G4 2

2 hits Apply

Manufacturer (2)

Hitachi Ltd 1 Renesas Electronics Corporation 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

4 2

2 hits Apply

DUAL GATE, DEPLETION MODE 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Transferred 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

Power Gain-Min (Gp) (1)

12.0 dB 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply