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BAS45A,133
Nexperia
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$0.1476 | Yes | Active | 250 mA | 1.5 µs | 300 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | LOW LEAKAGE CURRENT | 1 | O-LALF-W2 | e3 | IEC-134 | DO-34 | 1 | 175 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN | WIRE | AXIAL | NEXPERIA | DO-34 | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | SOD68 | compliant | EAR99 | 8541.10.00.70 | Nexperia | |||||||
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BAS45AL,115
Nexperia
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$0.1583 | Yes | Active | 250 mA | 1.5 µs | 400 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 125 V | 1 | LOW LEAKAGE CURRENT | 1 | Not Qualified | O-LELF-R2 | e3 | IEC-60134 | 1 | 175 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN | WRAP AROUND | END | NEXPERIA | MELF | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | SOD80C | compliant | EAR99 | 8541.10.00.70 | Nexperia | 1996-03-13 | ||||||
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BAS45A,113
Nexperia
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$0.1736 | Active | 250 mA | 1.5 µs | 300 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | LOW LEAKAGE CURRENT | 1 | Not Qualified | O-LALF-W2 | e3 | IEC-134 | DO-34 | 1 | 175 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN | WIRE | AXIAL | NEXPERIA | DO-34 | HERMETIC SEALED, GLASS PACKAGE-2 | 2 | SOD68 | compliant | EAR99 | 8541.10.00.70 | Nexperia | 1996-03-13 | ||||||
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BAS45AL,135
NXP Semiconductors
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Check for Price | Transferred | 250 mA | 1.5 µs | 400 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 125 V | 1 | Not Qualified | O-LELF-R2 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | NXP SEMICONDUCTORS | O-LELF-R2 | 2 | unknown | EAR99 | 8541.10.00.70 | ||||||||||||||||||||
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BAS45AL112
NXP Semiconductors
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Check for Price | Obsolete | 250 mA | 1 V | 1.5 µs | 1 nA | 400 mW | SILICON | RECTIFIER DIODE | SINGLE | YES | 125 V | 1 | 4 A | Not Qualified | O-LELF-R2 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | NXP SEMICONDUCTORS | O-LELF-R2 | unknown | EAR99 | 8541.10.00.70 | |||||||||||||||||
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BAS45A
Nexperia
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Check for Price | Yes | Active | 250 mA | 1.5 µs | 300 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | LOW LEAKAGE CURRENT | 1 | Not Qualified | O-LALF-W2 | e3 | IEC-134 | DO-34 | 1 | 175 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN | WIRE | AXIAL | NEXPERIA | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | EAR99 | 8541.10.00.70 | Nexperia | 1994-10-31 | ||||||||
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BAS45A
Philips Semiconductors
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Check for Price | Yes | Transferred | 200 mA | 1 V | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | 4 A | 1 | e3 | 175 °C | Matte Tin (Sn) | PHILIPS SEMICONDUCTORS | unknown | EAR99 | ||||||||||||||||||||||||||||
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BAS45A116
NXP Semiconductors
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Check for Price | Obsolete | 250 mA | 1 V | 1.5 µs | 1 nA | 300 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | 4 A | Not Qualified | O-LALF-W2 | DO-34 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | NXP SEMICONDUCTORS | O-LALF-W2 | unknown | EAR99 | 8541.10.00.70 | ||||||||||||||||
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BAS45AT/R
NXP Semiconductors
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Check for Price | Yes | Obsolete | 250 mA | 1 V | 1.5 µs | 300 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | LOW LEAKAGE CURRENT | 4 A | 1 | Not Qualified | O-LALF-W2 | e3 | DO-34 | 1 | 175 °C | 260 | 30 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN | WIRE | AXIAL | NXP SEMICONDUCTORS | DO-34 | O-LALF-W2 | 2 | compliant | EAR99 | 8541.10.00.70 | |||||||
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BAS45A,143
NXP Semiconductors
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Check for Price | Yes | Transferred | 250 mA | 1.5 µs | 300 mW | SILICON | RECTIFIER DIODE | SINGLE | NO | 125 V | 1 | LOW LEAKAGE CURRENT | O-LALF-W2 | DO-34 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | NXP SEMICONDUCTORS | DO-34 | O-LALF-W2 | 2 | SOD68 | compliant | EAR99 | 8541.10.00.70 |