Parametric results for: BA885E6327 under PIN Diodes
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BA885E6327
Infineon Technologies AG
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$0.0779 | Yes | Yes | Active | 0.4 pF | 0.26 pF | 7 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | 1.5 mA | 100 MHz | MEDIUM FREQUENCY TO L BAND | 1.6 µs | Not Qualified | R-PDSO-G3 | e3 | 1 | 150 °C | 260 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SOT-23 | SOT-23, 3 PIN | 3 | compliant | EAR99 | 8541.10.00.80 | Infineon | |||
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BA885E6327
Siemens
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Check for Price | Transferred | 0.4 pF | 40 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | ATTENUATOR; SWITCHING | MEDIUM FREQUENCY TO L BAND | Not Qualified | R-PDSO-G3 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | SIEMENS A G | unknown | EAR99 | 8541.10.00.80 | |||||||||||||||||||
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BA885E6327HTSA1
Infineon Technologies AG
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Check for Price | Yes | Yes | Obsolete | 0.4 pF | 7 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | MEDIUM FREQUENCY TO L BAND | 1.6 µs | Not Qualified | R-PDSO-G3 | e3 | 1 | 150 °C | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | SOT-23 | SOT-23, 3 PIN | 3 | compliant | EAR99 | 8541.10.00.80 | Infineon | |||||||
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BA885E6327
Rochester Electronics LLC
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Check for Price | Yes | Yes | Active | 0.4 pF | 7 Ω | SILICON | 50 V | PIN DIODE | SINGLE | YES | 1 | POSITIVE-INTRINSIC-NEGATIVE | ATTENUATOR; SWITCHING | MEDIUM FREQUENCY TO L BAND | 1.6 µs | COMMERCIAL | R-PDSO-G3 | e3 | NOT SPECIFIED | 260 | 40 | 3 | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | ROCHESTER ELECTRONICS INC | SOT-23 | R-PDSO-G3 | 3 | unknown |