Parametric results for: ATF58143TR2G under RF Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

SOURCE 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

5 V 3

3 hits Apply

Drain Current-Max (ID) (1)

100 mA 3

3 hits Apply

HIGH ELECTRON MOBILITY 3

3 hits Apply

Highest Frequency Band (1)

C BAND 3

3 hits Apply

R-PDSO-G4 3

3 hits Apply

e3 3

3 hits Apply

Manufacturer (3)

Agilent Technologies Inc 1 Avago Technologies 1 Broadcom Limited 1

3 hits Apply

1 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

4 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Obsolete 2 Transferred 1

3 hits Apply

Yes 1

3 hits Apply

260 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

500 mW 3

3 hits Apply

Power Gain-Min (Gp) (1)

15.0 dB 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply