Parametric results for: ATF541M4 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

LOW NOISE 12

14 hits Apply

Configuration (1)

SINGLE 12

14 hits Apply

DS Breakdown Voltage-Min (1)

5 V 12

14 hits Apply

Drain Current-Max (ID) (1)

120 mA 12

14 hits Apply

HIGH ELECTRON MOBILITY 12

14 hits Apply

Highest Frequency Band (2)

C BAND 6 X BAND 6

14 hits Apply

R-CBCC-N4 6 R-PBCC-N4 6

14 hits Apply

e0 3 e3 3 e4 6

14 hits Apply

Manufacturer (3)

Agilent Technologies Inc 6 Avago Technologies 4 Broadcom Limited 4

14 hits Apply

1 9

14 hits Apply

Number of Elements (1)

1 12

14 hits Apply

Number of Terminals (1)

4 12

14 hits Apply

DEPLETION MODE 6 ENHANCEMENT MODE 6

14 hits Apply

150.0 °C 9

14 hits Apply

CERAMIC, METAL-SEALED COFIRED 6 PLASTIC/EPOXY 6

14 hits Apply

RECTANGULAR 12

14 hits Apply

CHIP CARRIER 12

14 hits Apply

Obsolete 8 Transferred 6

14 hits Apply

Yes 4

14 hits Apply

260 6 NOT SPECIFIED 2

14 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

14 hits Apply

360 mW 9

14 hits Apply

Power Gain-Min (Gp) (1)

15.5 dB 12

14 hits Apply

Surface Mount (1)

YES 12

14 hits Apply