Parametric results for: ATF-551M4-TR1 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

LOW NOISE 4

4 hits Apply

Configuration (1)

SINGLE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

5 V 4

4 hits Apply

Drain Current-Max (ID) (1)

100 mA 4

4 hits Apply

HIGH ELECTRON MOBILITY 4

4 hits Apply

Highest Frequency Band (1)

X BAND 4

4 hits Apply

R-CBCC-N4 2 R-XBCC-N4 2

4 hits Apply

e0 1 e3 1 e4 2

4 hits Apply

Manufacturer (3)

Agilent Technologies Inc 2 Avago Technologies 1 Broadcom Limited 1

4 hits Apply

1 3

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

4 4

4 hits Apply

DEPLETION MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 2 UNSPECIFIED 2

4 hits Apply

RECTANGULAR 4

4 hits Apply

CHIP CARRIER 4

4 hits Apply

Obsolete 2 Transferred 2

4 hits Apply

Yes 1

4 hits Apply

260 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

270 mW 3

4 hits Apply

Power Gain-Min (Gp) (1)

15.5 dB 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply