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AT28C64B-15JU-T
Microchip Technology Inc
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$2.7585 | Yes | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | EEPROM | 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE | NO | YES | 10 | 100000 Write/Erase Cycles | 1 | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | 64 words | PARALLEL | 5 V | 100 µA | 40 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 10 ms | R-PQCC-J32 | e3 | 3 | 85 °C | -40 °C | 245 | 32 | PLASTIC/EPOXY | QCCJ | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.556 mm | 13.97 mm | 11.43 mm | MICROCHIP TECHNOLOGY INC | QCCJ, | compliant | EAR99 | 8542.32.00.51 | 2017-01-11 | Microchip | ||||||||
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AT28C64B-15SU-T
Microchip Technology Inc
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$2.8304 | Yes | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | EEPROM | 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE | NO | YES | 10 | 100000 Write/Erase Cycles | 1 | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | 64 words | PARALLEL | 5 V | 100 µA | 40 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 10 ms | R-PDSO-G28 | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 28 | PLASTIC/EPOXY | SOP | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 2.65 mm | 17.9 mm | 7.5 mm | MICROCHIP TECHNOLOGY INC | SOP, | compliant | EAR99 | 8542.32.00.51 | 2017-01-11 | Microchip | |||||||
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AT28C64B-15PU
Atmel Corporation
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$2.8388 | Yes | Yes | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | EEPROM | 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE | NO | YES | 10 | 100000 Write/Erase Cycles | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | 64 words | PARALLEL | 5 V | 100 µA | 40 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 10 ms | R-PDIP-T28 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 245 | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.826 mm | 37.0205 mm | 15.24 mm | ATMEL CORP | 15.24 MM, GREEN, PLASTIC, MS-011AB, DIP-28 | unknown | EAR99 | 8542.32.00.51 | Microchip | DIP | 28 | ||||||
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AT28C64B-15TU
Microchip Technology Inc
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$2.9252 | Yes | Yes | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | EEPROM | 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE | NO | YES | 10 | 100000 Write/Erase Cycles | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 64 words | PARALLEL | 5 V | 100 µA | 40 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 10 ms | R-PDSO-G28 | Not Qualified | e3 | 85 °C | -40 °C | 28 | PLASTIC/EPOXY | TSOP1 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 550 µm | DUAL | 1.2 mm | 11.8 mm | 8 mm | MICROCHIP TECHNOLOGY INC | TSOP1, TSSOP28,.53,22 | compliant | EAR99 | 8542.32.00.51 | 2017-01-11 | Microchip | ||||||||||
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AT28C64B-15TU-T
Microchip Technology Inc
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$3.0374 | Yes | Obsolete | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | EEPROM | 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE | 10 | 100000 Write/Erase Cycles | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 10 ms | R-PDSO-G28 | e3 | 85 °C | -40 °C | 28 | PLASTIC/EPOXY | TSOP1 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 550 µm | DUAL | 1.2 mm | 11.8 mm | 8 mm | MICROCHIP TECHNOLOGY INC | TSOP1, | compliant | EAR99 | 8542.32.00.51 | 2017-01-11 | Microchip | |||||||||||||||||||
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AT28C64B-15TU
Atmel Corporation
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$3.0500 | Yes | Yes | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 64 words | PARALLEL | 5 V | 100 µA | 40 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 10 ms | R-PDSO-G28 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 28 | PLASTIC/EPOXY | TSOP1 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 550 µm | DUAL | 1.2 mm | 11.8 mm | 8 mm | ATMEL CORP | 8 X 13.40 MM, GREEN, PLASTIC, MO-183, TSOP1-28 | unknown | EAR99 | 8542.32.00.51 | Microchip | TSOP1 | 28 | |||||||||
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AT28C64B-15JU-235
Microchip Technology Inc
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$3.1724 | Yes | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | EEPROM | 10 | 100000 Write/Erase Cycles | 1 | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 5 V | 100 µA | 400 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | 10 ms | HARDWARE/SOFTWARE | R-PQCC-J32 | e3 | 3 | 85 °C | -40 °C | 245 | 40 | 32 | PLASTIC/EPOXY | QCCJ | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 3.556 mm | 13.97 mm | 11.43 mm | MICROCHIP TECHNOLOGY INC | LCC-32 | compliant | EAR99 | 8542.32.00.51 | 2017-01-11 | Microchip | ||||||||||||
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AT28C64B-15JU
Atmel Corporation
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$3.4442 | Yes | Yes | Transferred | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 64 words | PARALLEL | 5 V | 100 µA | 40 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 10 ms | R-PQCC-J32 | Not Qualified | e3 | 2 | 85 °C | -40 °C | 245 | 40 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) | J BEND | 1.27 mm | QUAD | 3.556 mm | 13.97 mm | 11.43 mm | ATMEL CORP | GREEN, PLASTIC, MS-016AE, LCC-32 | unknown | EAR99 | 8542.32.00.51 | Microchip | QFJ | 32 | ||||||||
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AT28C64B-15SU
Microchip Technology Inc
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$4.2601 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | EEPROM | 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE | NO | YES | 10 | 100000 Write/Erase Cycles | 1 | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | 64 words | PARALLEL | 5 V | 100 µA | 40 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 10 ms | R-PDSO-G28 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 28 | PLASTIC/EPOXY | SOP | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 2.65 mm | 17.9 mm | 7.5 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | 2017-01-11 | Microchip | ||||||
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AT28C64B-15PU
Microchip Technology Inc
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$4.4066 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 5 V | 150 ns | EEPROM | 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE | NO | YES | 10 | 100000 Write/Erase Cycles | 1 | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | 64 words | PARALLEL | 5 V | 100 µA | 40 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | 10 ms | R-PDIP-T28 | Not Qualified | e3 | 85 °C | -40 °C | 28 | PLASTIC/EPOXY | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.826 mm | 37.0205 mm | 15.24 mm | MICROCHIP TECHNOLOGY INC | DIP-28 | compliant | EAR99 | 8542.32.00.51 | 2017-01-11 | Microchip |