Parametric results for: AT28BV64B under EEPROMs
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AT28BV64B-20JU-T
Microchip Technology Inc
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$2.6634 | Active | 65.536 kbit | 8 | 8KX8 | 3 V | 200 ns | EEPROM | NO | YES | 10 | 10000 Write/Erase Cycles | 1 | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 64 words | PARALLEL | 3 V | 50 µA | 15 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | 10 ms | HARDWARE/SOFTWARE | R-PQCC-J32 | e3 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 32 | PLASTIC/EPOXY | QCCJ | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) | J BEND | 1.27 mm | QUAD | 3.556 mm | 13.97 mm | 11.43 mm | MICROCHIP TECHNOLOGY INC | QCCJ, | compliant | EAR99 | 8542.31.00.01 | Microchip | ||||||||||
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AT28BV64B-20JU
Atmel Corporation
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$2.7800 | Yes | Yes | Transferred | 65.536 kbit | 8 | 8KX8 | 3 V | 200 ns | EEPROM | NO | YES | 100000 Write/Erase Cycles | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 64 words | PARALLEL | 3 V | 50 µA | 15 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | 10 ms | R-PQCC-J32 | Not Qualified | e3 | 2 | 85 °C | -40 °C | 245 | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | MATTE TIN | J BEND | 1.27 mm | QUAD | 3.556 mm | 13.97 mm | 11.43 mm | ATMEL CORP | GREEN, PLASTIC, MS-016AE, LCC-32 | unknown | EAR99 | 8542.32.00.51 | Microchip | QFJ | 32 | ||||||||
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AT28BV64B-20TU
Microchip Technology Inc
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$2.8741 | Yes | Yes | Obsolete | 65.536 kbit | 8 | 8KX8 | 200 ns | EEPROM | NO | YES | 10 | 100000 Write/Erase Cycles | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 3-STATE | 64 words | PARALLEL | 50 µA | 15 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | 10 ms | HARDWARE/SOFTWARE | R-PDSO-G28 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 28 | PLASTIC/EPOXY | TSOP1 | TSSOP28,.53,22 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 550 µm | DUAL | 1.2 mm | 11.8 mm | 8 mm | MICROCHIP TECHNOLOGY INC | TSOP1, TSSOP28,.53,22 | compliant | EAR99 | 8542.31.00.01 | Microchip | ||||||||||
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AT28BV64B-20SU
Atmel Corporation
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$2.9300 | Yes | Yes | Transferred | 65.536 kbit | 8 | 8KX8 | 3 V | 200 ns | EEPROM | 100K ENDURANCE CYCLES; DATA RETENTION = 10 YEARS | NO | YES | 10 | 100000 Write/Erase Cycles | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 64 words | PARALLEL | 3 V | 50 µA | 15 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | 10 ms | R-PDSO-G28 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | 40 | 28 | PLASTIC/EPOXY | SOP | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 2.65 mm | 17.9 mm | 7.5 mm | ATMEL CORP | SOP, SOP28,.4 | compliant | EAR99 | 8542.32.00.51 | Microchip | SOIC | 28 | |||||
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AT28BV64B-20TU-T
Microchip Technology Inc
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$3.0374 | Obsolete | 65.536 kbit | 8 | 8KX8 | 3 V | 200 ns | EEPROM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | 10 ms | R-PDSO-G28 | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 28 | PLASTIC/EPOXY | TSOP | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | GULL WING | 550 µm | DUAL | 1.2 mm | 11.8 mm | 8 mm | MICROCHIP TECHNOLOGY INC | TSOP, | compliant | EAR99 | 8542.31.00.01 | Microchip | |||||||||||||||||||||||
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AT28BV64B-20SU
Microchip Technology Inc
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$3.3511 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 200 ns | EEPROM | NO | YES | 10 | 100000 Write/Erase Cycles | 1 | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 64 words | PARALLEL | 50 µA | 15 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | 10 ms | R-PDSO-G28 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 28 | PLASTIC/EPOXY | SOP | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 2.65 mm | 17.9 mm | 7.5 mm | MICROCHIP TECHNOLOGY INC | SOP, SOP28,.4 | compliant | EAR99 | 8542.31.00.01 | Microchip | |||||||||
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AT28BV64B-20JU
Microchip Technology Inc
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$3.5112 | Yes | Yes | Active | 65.536 kbit | 8 | 8KX8 | 200 ns | EEPROM | NO | YES | 10 | 100000 Write/Erase Cycles | 1 | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 64 words | PARALLEL | 50 µA | 15 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | 10 ms | R-PQCC-J32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 245 | 40 | 32 | PLASTIC/EPOXY | QCCJ | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | YES | Matte Tin (Sn) - annealed | J BEND | 1.27 mm | QUAD | 3.556 mm | 13.97 mm | 11.43 mm | MICROCHIP TECHNOLOGY INC | LCC-32 | compliant | EAR99 | 8542.31.00.01 | Microchip | |||||||||
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AT28BV64B-20SU-T
Microchip Technology Inc
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$54.6813 | Active | 65.536 kbit | 8 | 8KX8 | 3 V | 200 ns | EEPROM | 100K ENDURANCE CYCLES; DATA RETENTION = 10 YEARS | NO | YES | 10 | 100000 Write/Erase Cycles | 1 | 1 | 8000 | 8.192 k | ASYNCHRONOUS | 64 words | PARALLEL | 3 V | 50 µA | 15 µA | 3.6 V | 2.7 V | CMOS | INDUSTRIAL | YES | 10 ms | HARDWARE/SOFTWARE | R-PDSO-G28 | e3 | 3 | 85 °C | -40 °C | 260 | 30 | 28 | PLASTIC/EPOXY | SOP | SOP28,.4 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 2.65 mm | 17.9 mm | 7.5 mm | MICROCHIP TECHNOLOGY INC | SOP, | compliant | EAR99 | 8542.31.00.01 | Microchip | ||||||||
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AT28BV64B-25PL
Atmel Corporation
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Check for Price | Yes | Yes | Transferred | 65.536 kbit | 8 | 8KX8 | 3 V | 250 ns | EEPROM | 1 | 8000 | 8.192 k | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | COMMERCIAL | 10 ms | R-PDIP-T28 | Not Qualified | e3 | 1 | 70 °C | 28 | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 4.826 mm | 37.0205 mm | 15.24 mm | ATMEL CORP | DIP, | compliant | EAR99 | 8542.32.00.51 | DIP | 28 | |||||||||||||||||||
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AT28BV64B-DWF
Microchip Technology Inc
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Check for Price | Obsolete | 250 ns | EEPROM | 1 | ASYNCHRONOUS | PARALLEL | 3 V | 3.6 V | 2.7 V | CMOS | COMMERCIAL | X-XUUC-N28 | Not Qualified | 70 °C | 28 | UNSPECIFIED | DIE | UNSPECIFIED | UNCASED CHIP | YES | NO LEAD | UPPER | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8542.32.00.51 |