Parametric results for: AT24C04 under EEPROMs

All Filters Additional Feature Clock Frequency-Max (fCLK) Command User Interface Data Polling Data Retention Time-Min Endurance I2C Control Byte JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Power Supplies Supply Voltage-Nom (Vsup)

1 MILLION ENDURANCE WRITE CYCLES; DATA RETENTION = 100 YEARS 1 1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz 8 2 WIRE INTERFACE; PAGE WRITE 11 2 WIRE SERIAL INTERFACE; DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES 25 2-WIRE SERIAL INTERFACE 38 ALSO OPERATES 1.7V AT 100 KHZ 4 ALSO OPERATES AT 1.7V TO 2.5V @0.4MHZ 6 DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES 30 DATA RETENTION = 100 YEARS 11 I2C BUS SERIAL INTERFACE; AUTOMATIC WRITE 40

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Clock Frequency-Max (fCLK) (3)

100 kHz 141 400 kHz 250 1 MHz 42

Min (MHz) - Max (MHz)

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NO 1

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YES 12

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100 371

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100000.0 Write/Erase Cycles 24 1000000.0 Write/Erase Cycles 407

Min (Write/EraseCycles) - Max (Write/EraseCycles)

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1010000R 4 101000DR 2 101000MR 7 1010DDMR 118 1010DDXR 255 1010XXMR 45

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R-PBGA-B4 6 R-PBGA-B5 4 R-PBGA-B8 14 R-PDIP-T8 71 R-PDSO-G14 58 R-PDSO-G5 22 R-PDSO-G8 243 R-PDSO-N8 34 R-XDSO-N8 20 R-XUUC-N 4 R-XXMA-X8 2 S-PDSO-G8 12 X-XUUC-N 11 X-XXMA-X8 11

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e0 195 e1 9 e3 110 e4 90

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856 µm 7 860 µm 3 2 mm 12 2.3 mm 1 2.9 mm 26 3 mm 53 3.73 mm 2 4.4 mm 65 4.89 mm 6 4.9 mm 103 4.92 mm 4 4.925 mm 7 5.255 mm 1 6.4 mm 2 8.65 mm 44 9.27 mm 15 9.271 mm 32 9.36 mm 8 9.59 mm 12

Min (mm) - Max (mm)

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Manufacturer (5)

Atmel Corporation 208 Catalyst Semiconductor 170 Microchip Technology Inc 73 onsemi 66 Rochester Electronics LLC 6

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Memory Density (3)

256 bit 1 512 bit 27 4.096 kbit 485

Min (bit) - Max (bit)

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EEPROM 513

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Memory Width (3)

1 21 8 464 16 28

Min - Max

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1 175 3 7 NOT SPECIFIED 4

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1.0 433

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1 25

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14 58 4 6 5 27 8 406

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16 words 1 32 words 27 512 words 464 4.096 k 21

Min (words) - Max (words)

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16.0 1 32.0 27 512.0 464 4000.0 21

Min - Max

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SYNCHRONOUS 433

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70.0 °C 104 85.0 °C 285 105.0 °C 12 125.0 °C 112

Min (°C) - Max (°C)

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-40.0 °C 409 0.0 °C 104

Min (°C) - Max (°C)

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Organization (4)

16X16 1 32X16 27 4KX1 21 512X8 464

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OPEN-DRAIN 128

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PLASTIC/EPOXY 464 UNSPECIFIED 49

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DIE 16 DIP 71 HVSON 42 HVSSON 3 SON 1 SOP 229 TSOP 1 TSSOP 88 VFBGA 24 VSON 8 VSSOP 17

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BGA4,2X2,16 2 BGA5,3X3,10/6 1 BGA8,2X4,40/20 10 CARD8 13 DIE OR CHIP 2 DIP8,.3 52 SOLCC8,.11,20 18 SOLCC8,.12,20 8 SOLCC8,.2,25 7 SOLCC8,.25,25 2 SOP14,.25 38 SOP8,.23 6 SOP8,.25 125 SOP8,.3 1 TSOP5/6,.11,37 17 TSSOP8,.12,20 1 TSSOP8,.19 8 TSSOP8,.25 53

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RECTANGULAR 478 SQUARE 12 UNSPECIFIED 22

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GRID ARRAY, VERY THIN PROFILE, FINE PITCH 24 IN-LINE 71 MICROELECTRONIC ASSEMBLY 13 SMALL OUTLINE 230 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE 43 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH 3 SMALL OUTLINE, THIN PROFILE 1 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 88 SMALL OUTLINE, VERY THIN PROFILE 7 SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH 17 UNCASED CHIP 16

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16 words 13

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Power Supplies (1)

2/5 V 5

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Supply Voltage-Nom (Vsup) (5)

1.8 V 13 2.5 V 64 3 V 94 3.3 V 120 5 V 198

Min (V) - Max (V)

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