Parametric results for: AS4C4M4E0-60TC under DRAMs

All Filters Access Mode Access Time-Max Additional Feature I/O Type JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FAST PAGE WITH EDO 1

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Access Time-Max (1)

60 ns 1

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CAS BEFORE RAS/RAS ONLY/HIDDEN/SELF REFRESH 1

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COMMON 1

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R-PDSO-G24 1

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e0 1

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Manufacturer (1)

Alliance Semiconductor Corporation 1

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Memory Density (1)

16.7772 Mbit 1

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EDO DRAM 1

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Memory Width (1)

4 1

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1.0 1

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1 1

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24 1

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4.1943 M 1

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4000000.0 1

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ASYNCHRONOUS 1

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70.0 °C 1

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0.0 °C 1

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Organization (1)

4MX4 1

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3-STATE 1

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PLASTIC/EPOXY 1

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SOP 1

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TSOP24/26,.36 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Refresh Cycles (1)

4096 1

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Supply Voltage-Nom (Vsup) (1)

5 V 1

1 hit Apply