Parametric results for: AS4C2M32D1A-5BINTR under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 1

1 hit Apply

Access Time-Max (1)

700 ps 1

1 hit Apply

AUTO/SELF REFRESH 1

1 hit Apply

Clock Frequency-Max (fCLK) (1)

200 MHz 1

1 hit Apply

COMMON 1

1 hit Apply

2,4,8 1

1 hit Apply

S-PBGA-B144 1

1 hit Apply

12 mm 1

1 hit Apply

Manufacturer (1)

Alliance Memory Inc 1

1 hit Apply

Memory Density (1)

67.1089 Mbit 1

1 hit Apply

DDR1 DRAM 1

1 hit Apply

Memory Width (1)

32 1

1 hit Apply

3 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

144 1

1 hit Apply

2.0972 M 1

1 hit Apply

2000000.0 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

85.0 °C 1

1 hit Apply

-40.0 °C 1

1 hit Apply

Organization (1)

2MX32 1

1 hit Apply

3-STATE 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

LFBGA 1

1 hit Apply

BGA144,12X12,32 1

1 hit Apply

SQUARE 1

1 hit Apply

GRID ARRAY, LOW PROFILE, FINE PITCH 1

1 hit Apply

Refresh Cycles (1)

4096 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

2.5 V 1

1 hit Apply