Parametric results for: APTM100H18FG under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Surface Mount

AVALANCHE RATED 2

2 hits Apply

3000.0 mJ 2

2 hits Apply

ISOLATED 2

2 hits Apply

Configuration (1)

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

1 kV 2

2 hits Apply

Drain Current-Max (ID) (1)

43 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

210 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-XUFM-X12 2

2 hits Apply

e1 2

2 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Microsemi Corporation 1

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

4 2

2 hits Apply

Number of Terminals (1)

12 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

UNSPECIFIED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Yes 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply