Parametric results for: APTGTQ100H65T3G under IGBTs

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Gate-Emitter Thr Voltage-Max Gate-Emitter Voltage-Max JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ISOLATED 2

2 hits Apply

Collector Current-Max (IC) (1)

100 A 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

650 V 2

2 hits Apply

Configuration (1)

COMPLEX 2

2 hits Apply

Gate-Emitter Thr Voltage-Max (1)

4.7 V 2

2 hits Apply

20 V 2

2 hits Apply

R-XUFM-X25 2

2 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Microsemi Corporation 1

2 hits Apply

Number of Elements (1)

4 2

2 hits Apply

Number of Terminals (1)

25 2

2 hits Apply

175.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

UNSPECIFIED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

250 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply