Parametric results for: APTGT100H120G under IGBTs

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Gate-Emitter Voltage-Max JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

2 hits Apply

ISOLATED 2

2 hits Apply

Collector Current-Max (IC) (1)

140 A 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

1.2 kV 2

2 hits Apply

Configuration (1)

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE 2

2 hits Apply

20 V 2

2 hits Apply

R-XUFM-X12 2

2 hits Apply

e1 2

2 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Microsemi Corporation 1

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

4 2

2 hits Apply

Number of Terminals (1)

12 2

2 hits Apply

150.0 °C 2

2 hits Apply

UNSPECIFIED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Yes 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

480 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply