Parametric results for: APTC60HM70T1G under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2

2 hits Apply

1800.0 mJ 2

2 hits Apply

Configuration (1)

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR 2

2 hits Apply

DS Breakdown Voltage-Min (1)

600 V 2

2 hits Apply

Drain Current-Max (ID) (1)

39 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

70 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-XUFM-T12 2

2 hits Apply

e1 2

2 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Microsemi Corporation 1

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

4 2

2 hits Apply

Number of Terminals (1)

12 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

UNSPECIFIED 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Yes 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

250 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply