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1 - 10 of 10 results
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APT94N65B2C6
Microchip Technology Inc
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$15.6084 | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 650 V | 1 | 95 A | 35 mΩ | 1160 mJ | 603 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 833 W | 282 A | SILICON | R-PSIP-T3 | 150 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | ||||||||||||||||
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APT94N60L2C3G
Microchip Technology Inc
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$25.7150 | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 94 A | 35 mΩ | AVALANCHE RATED | 1800 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 282 A | SWITCHING | SILICON | R-PSIP-T3 | e3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN | THROUGH-HOLE | SINGLE | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | |||||||||||||
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APT94N60L2C3
Advanced Power Technology
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 94 A | 35 mΩ | AVALANCHE RATED | 1800 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 282 A | SWITCHING | SILICON | R-PSIP-T3 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | ADVANCED POWER TECHNOLOGY INC | unknown | EAR99 | IN-LINE, R-PSIP-T3 | |||||||||||||
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APT94N60L2C3G
Microsemi Corporation
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 94 A | 35 mΩ | AVALANCHE RATED | 1800 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 282 A | SWITCHING | SILICON | R-PSIP-T3 | e3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN | THROUGH-HOLE | SINGLE | MICROSEMI CORP | unknown | EAR99 | TO-264, 3 PIN | TO-264MA | 3 | Microsemi Corporation | ||||||||
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APT94N65B2C6
Microsemi Corporation
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 650 V | 1 | 95 A | 35 mΩ | 1160 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 833 W | 282 A | SWITCHING | SILICON | R-PSIP-T3 | 150 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | MICROSEMI CORP | compliant | EAR99 | Microsemi Corporation | |||||||||||||||
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APT94N65LC6
Microsemi Corporation
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 650 V | 1 | 95 A | 35 mΩ | 1160 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 833 W | 282 A | SWITCHING | SILICON | TO-264AA | R-PSFM-T3 | 150 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | MICROSEMI CORP | compliant | EAR99 | FLANGE MOUNT, R-PSFM-T3 | ||||||||||||||
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APT94N65B2C3
Microsemi Corporation
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 650 V | 1 | 94 A | 35 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 1800 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 415 W | 282 A | SILICON | R-PSIP-T3 | Not Qualified | 150 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | MICROSEMI CORP | unknown | EAR99 | TMAX-3 | 3 | |||||||||||||
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APT94N65B2C3G
Microsemi Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 650 V | 1 | 94 A | 35 mΩ | AVALANCHE RATED, ULTRA-LOW RESISTANCE | 1800 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 415 W | 282 A | SILICON | R-PSIP-T3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | MICROSEMI CORP | compliant | EAR99 | ROHS COMPLIANT, TMAX-3 | 3 | Microsemi Corporation | ||||||||||
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APT94N60L2C3
Microsemi Corporation
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Check for Price | No | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 94 A | 35 mΩ | AVALANCHE RATED | 1800 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 282 A | SWITCHING | SILICON | R-PSIP-T3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | MICROSEMI CORP | unknown | EAR99 | TO-264MAX, 3 PIN | TO-264AA | 3 | |||||||||
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APT94N60L2C3E3
Microsemi Corporation
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Check for Price | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 600 V | 1 | 94 A | 35 mΩ | AVALANCHE RATED | 1800 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 282 A | SWITCHING | SILICON | TO-264AA | R-PSFM-T3 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | MICROSEMI CORP | compliant | EAR99 | FLANGE MOUNT, R-PSFM-T3 |