Parametric results for: APT801R4CN under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

ISOLATED 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

800 V 2

2 hits Apply

Drain Current-Max (ID) (1)

6.5 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

1.4 Ω 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-254AA 2

2 hits Apply

S-MSFM-P3 2

2 hits Apply

e0 2

2 hits Apply

Manufacturer (2)

Advanced Power Technology 1 Microsemi Corporation 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

METAL 2

2 hits Apply

SQUARE 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Obsolete 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

150 W 2

2 hits Apply

150 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply