Parametric results for: APT801R4AN under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 1

2 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

800 V 1

2 hits Apply

Drain Current-Max (ID) (1)

7.5 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

1.4 Ω 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-204AA 1

2 hits Apply

O-MBFM-P2 1

2 hits Apply

e0 1

2 hits Apply

Manufacturer (2)

Advanced Power Technology 1 Microsemi Corporation 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 1

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

METAL 1

2 hits Apply

ROUND 1

2 hits Apply

FLANGE MOUNT 1

2 hits Apply

Obsolete 1 Transferred 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

198 W 1

2 hits Apply

198 W 2

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply