Parametric results for: APT5022BNF under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1 FRED FET 1

8 hits Apply

1300.0 mJ 1

8 hits Apply

DRAIN 6

8 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 6

8 hits Apply

DS Breakdown Voltage-Min (1)

500 V 6

8 hits Apply

Drain Current-Max (ID) (1)

27 A 8

8 hits Apply

Drain-source On Resistance-Max (1)

220 mΩ 6

8 hits Apply

METAL-OXIDE SEMICONDUCTOR 8

8 hits Apply

350 pF 6

8 hits Apply

TO-247 2 TO-247AD 2

8 hits Apply

R-PSFM-G3 2 R-PSFM-T3 4

8 hits Apply

e0 2

8 hits Apply

Manufacturer (2)

Advanced Power Technology 4 Microsemi Corporation 4

8 hits Apply

Number of Elements (1)

1 8

8 hits Apply

Number of Terminals (1)

3 6

8 hits Apply

ENHANCEMENT MODE 8

8 hits Apply

150.0 °C 8

8 hits Apply

PLASTIC/EPOXY 6

8 hits Apply

RECTANGULAR 6

8 hits Apply

FLANGE MOUNT 6

8 hits Apply

Obsolete 7 Transferred 1

8 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 8

8 hits Apply

360 W 6

8 hits Apply

360 W 4

8 hits Apply

Surface Mount (2)

NO 6 YES 2

8 hits Apply