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APT5015BVRG
Microchip Technology Inc
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$13.0032 | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 500 V | 1 | 32 A | 150 mΩ | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 128 A | SWITCHING | SILICON | TO-247 | R-PSFM-T3 | e1 | Not Qualified | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | Tin/Silver/Copper (Sn/Ag/Cu) | THROUGH-HOLE | SINGLE | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | Microchip | ||||
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APT5015BVRG
Microsemi Corporation
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Check for Price | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 500 V | 1 | 32 A | 150 mΩ | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 128 A | SWITCHING | SILICON | TO-247 | R-PSFM-T3 | e1 | Not Qualified | 150 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | TIN SILVER COPPER | THROUGH-HOLE | SINGLE | MICROSEMI CORP | compliant | EAR99 | ||||||
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APT5015BVR
Microsemi Corporation
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Check for Price | No | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 500 V | 1 | 32 A | 150 mΩ | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 128 A | SWITCHING | SILICON | TO-247 | R-PSFM-T3 | Not Qualified | 150 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | MICROSEMI CORP | unknown | EAR99 | ||||||
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APT5015BVR
Advanced Power Technology
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 500 V | 1 | 32 A | 150 mΩ | 1300 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 128 A | SWITCHING | SILICON | TO-247 | R-PSFM-T3 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | THROUGH-HOLE | SINGLE | ADVANCED POWER TECHNOLOGY INC | unknown | EAR99 | FLANGE MOUNT, R-PSFM-T3 |