Parametric results for: AP9997GK under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

DRAIN 2

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

100 V 2

2 hits Apply

Drain Current-Max (ID) (1)

3.2 A 1

2 hits Apply

Drain-source On Resistance-Max (1)

120 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

R-PDSO-G4 2

2 hits Apply

Manufacturer (1)

Advanced Power Electronics Corp 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

4 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Contact Manufacturer 1 Obsolete 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply