Parametric results for: AP86T02GJ under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

29.0 mJ 2

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

25 V 2

3 hits Apply

Drain Current-Max (ID) (1)

75 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

6 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

TO-251 2

3 hits Apply

R-PSIP-T3 2

3 hits Apply

Manufacturer (1)

Advanced Power Electronics Corp 3

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

ENHANCEMENT MODE 2

3 hits Apply

175.0 °C 1

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

IN-LINE 2

3 hits Apply

Contact Manufacturer 3

3 hits Apply

NOT SPECIFIED 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

Surface Mount (1)

NO 2

3 hits Apply