Parametric results for: AP2304GN-HF under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

25 V 1

1 hit Apply

Drain Current-Max (ID) (1)

2.7 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

117 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

R-PDSO-G3 1

1 hit Apply

Manufacturer (1)

Advanced Power Electronics Corp 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

Number of Terminals (1)

3 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Contact Manufacturer 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply