Parametric results for: AP03N70H under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

AVALANCHE RATED 2

5 hits Apply

3.1 mJ 1 31.0 mJ 4

Min (mJ) - Max (mJ)

5 hits Apply

DRAIN 1

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (3)

600 V 1 650 V 1 700 V 3

Min (V) - Max (V)

5 hits Apply

Drain Current-Max (ID) (2)

2.5 A 3 3.3 A 2

Min (A) - Max (A)

5 hits Apply

Drain-source On Resistance-Max (2)

3.6 Ω 2 4.4 Ω 3

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-252 5

5 hits Apply

R-PSSO-G2 5

5 hits Apply

Manufacturer (1)

Advanced Power Electronics Corp 5

5 hits Apply

1 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

2 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 2

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Contact Manufacturer 5

5 hits Apply

NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply