Parametric results for: AN045 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

GATE PROTECTED 26

26 hits Apply

Configuration (1)

COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE 26

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DS Breakdown Voltage-Min (5)

160 V 6 200 V 4 300 V 4 320 V 6 400 V 6

Min (V) - Max (V)

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Drain Current-Max (ID) (2)

25 mA 10 30 mA 16

Min (A) - Max (A)

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Drain-source On Resistance-Max (2)

300 Ω 8 350 Ω 18

Min (Ω) - Max (Ω)

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METAL-OXIDE SEMICONDUCTOR 26

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2.4 pF 26

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R-PDIP-T18 10 R-PDSO-G20 6 S-XUUC-N16 10

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e0 26

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Manufacturer (2)

Microchip Technology Inc 13 Supertex Inc 13

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Number of Elements (1)

8 26

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Number of Terminals (3)

16 10 18 10 20 6

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ENHANCEMENT MODE 26

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150.0 °C 26

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PLASTIC/EPOXY 16 UNSPECIFIED 10

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RECTANGULAR 16 SQUARE 10

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IN-LINE 10 SMALL OUTLINE 6 UNCASED CHIP 10

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Active 13 Obsolete 13

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Polarity/Channel Type (1)

N-CHANNEL 26

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1.4 W 3 1.5 W 5

Min (W) - Max (W)

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1.4 W 6 1.5 W 10

Min (W) - Max (W)

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Surface Mount (2)

NO 10 YES 16

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