Parametric results for: AN0116WG under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

160 V 2

2 hits Apply

Drain Current-Max (ID) (1)

30 mA 2

2 hits Apply

Drain-source On Resistance-Max (1)

350 Ω 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

1.5 pF 2

2 hits Apply

R-PDSO-G20 2

2 hits Apply

e0 2

2 hits Apply

Manufacturer (2)

Microchip Technology Inc 1 Supertex Inc 1

2 hits Apply

Number of Elements (1)

8 2

2 hits Apply

Number of Terminals (1)

20 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Active 1 Obsolete 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

1.4 W 1

2 hits Apply

1.4 W 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply