Findchips: Parametric Search Results for AM29LV800BB-120WBE


Select Parts		Part Number

		AM29LV800BB120WBE Spansion
		AM29LV800BB-120WBE Cypress Semiconductor
		AM29LV800BB120WBE AMD
		AM29LV800BB-120WBE Spansion

			Most Relevant							Technical																								Compliance			Operating Conditions					Physical											Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Sector Size	Organization	Supply Voltage-Nom (Vsup)	Power Supplies	Access Time-Max	Memory IC Type	Additional Feature	Alternate Memory Width	Boot Block	Command User Interface	Data Polling	Endurance	Number of Functions	Number of Sectors/Size	Number of Words Code	Number of Words	Operating Mode	Output Characteristics	Parallel/Serial	Programming Voltage	Ready/Busy	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Toggle Bit	Type	JESD-30 Code	Qualification Status	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Finish	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

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Obsolete

8.3886 Mbit

1MX8

3 V

120 ns

FLASH

CONFG AS 512K X 16; 1000K WRITE CYCLES MIN; BOTTOM BOOT BLOCK

1000000

1.0486 M

ASYNCHRONOUS

PARALLEL

3 V

3.6 V

2.7 V

CMOS

MILITARY

R-PBGA-B48

Not Qualified

125 °C

-55 °C

240

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

TIN LEAD

BALL

BOTTOM

SPANSION INC

BGA

BGA,

compliant

Check for Price

Active

8.3886 Mbit

16K,8K,32K,64K

512KX16

3/3.3 V

120 ns

FLASH

BOTTOM

YES

1000000 Write/Erase Cycles

1,2,1,15

512000

524.288 k

PARALLEL

YES

5 µA

30 µA

CMOS

MILITARY

YES

NOR TYPE

R-PBGA-B48

Not Qualified

125 °C

-55 °C

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

CYPRESS SEMICONDUCTOR CORP

compliant

Check for Price

Transferred

8.3886 Mbit

16K,8K,32K,64K

1MX8

3 V

120 ns

FLASH

CONFG AS 512K X 16; 1000K WRITE CYCLES MIN; BOTTOM BOOT BLOCK

BOTTOM

YES

1000000 Write/Erase Cycles

1,2,1,15

1000000

1.0486 M

ASYNCHRONOUS

3-STATE

PARALLEL

3 V

YES

5 µA

30 µA

3.6 V

2.7 V

CMOS

MILITARY

YES

NOR TYPE

R-PBGA-B48

Not Qualified

125 °C

-55 °C

PLASTIC/EPOXY

BGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY

YES

Tin/Lead (Sn/Pb)

BALL

800 µm

BOTTOM

ADVANCED MICRO DEVICES INC

BGA

6 X 9 MM, 0.80 MM PITCH, FBGA-48

unknown

3A001.A.2.C

8542.32.00.51

Check for Price

Obsolete

8.3886 Mbit

16K,8K,32K,64K

512KX16

3 V

120 ns

FLASH

CAN ALSO BE OPERATED FROM 3 TO 3.6 VOLTS REGULATED; BOTTOM BOOT BLOCK

BOTTOM

YES

1000000 Write/Erase Cycles

1,2,1,15

512000

524.288 k

ASYNCHRONOUS

PARALLEL

3 V

YES

5 µA

30 µA

3.6 V

2.7 V

CMOS

MILITARY

YES

NOR TYPE

R-PBGA-B48

Not Qualified

125 °C

-55 °C

260

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

9 mm

6 mm

SPANSION INC

BGA

6 X 9 MM, 0.80 MM PITCH, FBGA-48

not_compliant

3A001.A.2.C

8542.32.00.51

Compare

AM29LV800BB120WBE

Spansion

Check for Price

Obsolete

8.3886 Mbit

1MX8

3 V

120 ns

FLASH

CONFG AS 512K X 16; 1000K WRITE CYCLES MIN; BOTTOM BOOT BLOCK

1000000

1.0486 M

ASYNCHRONOUS

PARALLEL

3 V

3.6 V

2.7 V

CMOS

MILITARY

R-PBGA-B48

Not Qualified

125 °C

-55 °C

240

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

TIN LEAD

BALL

BOTTOM

SPANSION INC

BGA

BGA,

compliant

AM29LV800BB-120WBE

Cypress Semiconductor

Check for Price

Active

8.3886 Mbit

16K,8K,32K,64K

512KX16

3/3.3 V

120 ns

FLASH

BOTTOM

YES

1000000 Write/Erase Cycles

1,2,1,15

512000

524.288 k

PARALLEL

YES

5 µA

30 µA

CMOS

MILITARY

YES

NOR TYPE

R-PBGA-B48

Not Qualified

125 °C

-55 °C

PLASTIC/EPOXY

FBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, FINE PITCH

YES

BALL

800 µm

BOTTOM

CYPRESS SEMICONDUCTOR CORP

compliant

AM29LV800BB120WBE

AMD

Check for Price

Transferred

8.3886 Mbit

16K,8K,32K,64K

1MX8

3 V

120 ns

FLASH

CONFG AS 512K X 16; 1000K WRITE CYCLES MIN; BOTTOM BOOT BLOCK

BOTTOM

YES

1000000 Write/Erase Cycles

1,2,1,15

1000000

1.0486 M

ASYNCHRONOUS

3-STATE

PARALLEL

3 V

YES

5 µA

30 µA

3.6 V

2.7 V

CMOS

MILITARY

YES

NOR TYPE

R-PBGA-B48

Not Qualified

125 °C

-55 °C

PLASTIC/EPOXY

BGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY

YES

Tin/Lead (Sn/Pb)

BALL

800 µm

BOTTOM

ADVANCED MICRO DEVICES INC

BGA

6 X 9 MM, 0.80 MM PITCH, FBGA-48

unknown

3A001.A.2.C

8542.32.00.51

AM29LV800BB-120WBE

Spansion

Check for Price

Obsolete

8.3886 Mbit

16K,8K,32K,64K

512KX16

3 V

120 ns

FLASH

CAN ALSO BE OPERATED FROM 3 TO 3.6 VOLTS REGULATED; BOTTOM BOOT BLOCK

BOTTOM

YES

1000000 Write/Erase Cycles

1,2,1,15

512000

524.288 k

ASYNCHRONOUS

PARALLEL

3 V

YES

5 µA

30 µA

3.6 V

2.7 V

CMOS

MILITARY

YES

NOR TYPE

R-PBGA-B48

Not Qualified

125 °C

-55 °C

260

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

TIN LEAD

BALL

800 µm

BOTTOM

1.2 mm

9 mm

6 mm

SPANSION INC

BGA

6 X 9 MM, 0.80 MM PITCH, FBGA-48

not_compliant

3A001.A.2.C

8542.32.00.51

Parametric results for: AM29LV800BB-120WBE under Flash Memories