Parametric results for: AM29LV400BB120EC under Flash Memories

All Filters Access Time-Max Additional Feature Alternate Memory Width Boot Block Command User Interface Data Polling Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

120 ns 4

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BOTTOM BOOT BLOCK 1 CONFG AS 256K X 16; EMBEDDED ALGORITHMS; 20 YEAR DATA RETENTION; BOTTOM BOOT BLOCK 2 MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION; CAN ALSO BE CONFIGURED AS 256K X 16 1

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8 2

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BOTTOM 2

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YES 2

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YES 2

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20 1

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1000000.0 Write/Erase Cycles 2

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R-PDSO-G48 4

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e0 3

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18.4 mm 4

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Manufacturer (2)

AMD 2 Spansion 2

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Memory Density (1)

4.1943 Mbit 4

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FLASH 4

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Memory Width (2)

8 2 16 2

Min - Max

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3 2

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1.0 4

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1,2,1,7 2

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48 4

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262.144 k 2 524.288 k 2

Min (words) - Max (words)

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256000.0 2 512000.0 2

Min - Max

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ASYNCHRONOUS 4

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70.0 °C 4

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0.0 °C 4

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Organization (2)

256KX16 2 512KX8 2

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PLASTIC/EPOXY 4

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TSOP1 3 TSSOP 1

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TSSOP48,.8,20 2

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RECTANGULAR 4

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SMALL OUTLINE, THIN PROFILE 3 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 1

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Sector Size (1)

16K,8K,32K,64K 2

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Supply Voltage-Nom (Vsup) (1)

3 V 4

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