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Parametric » Memory » Flash Memories

Parametric results for: AM29LV004BB-120FIB under Flash Memories

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Manufacturer Part Number: am29lv004bb120f
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AM29LV004BB-120FK
 Spansion 		Check for Price Yes Obsolete 4.1943 Mbit 8 512KX8 3 V 120 ns FLASH MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION; BOTTOM BOOT BLOCK BOTTOM 20 1 512000 524.288 k ASYNCHRONOUS PARALLEL 3 V 3.6 V 2.7 V CMOS MILITARY NOR TYPE R-PDSO-G40 Not Qualified e3 125 °C -55 °C 40 PLASTIC/EPOXY TSOP1-R RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 500 µm DUAL 1.2 mm 18.4 mm 10 mm SPANSION INC TSOP1 TSOP1-R, 40 compliant 3A001.A.2.C 8542.32.00.51
AM29LV004BB-120FC
 Spansion 		Check for Price No Obsolete 4.1943 Mbit 8 16K,8K,32K,64K 512KX8 3 V 120 ns FLASH MIN 1000K WRITE CYCLES; 20 YEAR DATA RETENTION; BOTTOM BOOT BLOCK BOTTOM YES YES 20 1000000 Write/Erase Cycles 1 1,2,1,7 512000 524.288 k ASYNCHRONOUS PARALLEL 3 V YES YES 5 µA 30 µA 3.6 V 2.7 V CMOS COMMERCIAL YES NOR TYPE R-PDSO-G40 Not Qualified e0 3 70 °C 260 40 PLASTIC/EPOXY TSOP1-R TSSOP40,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 500 µm DUAL 1.2 mm 18.4 mm 10 mm SPANSION INC TSOP1 TSOP1-R, TSSOP40,.8,20 40 not_compliant EAR99 8542.32.00.51
AM29LV004BB-120FF
 Spansion 		Check for Price Yes Obsolete 4.1943 Mbit 8 512KX8 3 V 120 ns FLASH MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION; BOTTOM BOOT BLOCK BOTTOM 20 1 512000 524.288 k ASYNCHRONOUS PARALLEL 3 V 3.6 V 2.7 V CMOS INDUSTRIAL NOR TYPE R-PDSO-G40 Not Qualified e3 85 °C -40 °C 40 PLASTIC/EPOXY TSOP1-R RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 500 µm DUAL 1.2 mm 18.4 mm 10 mm SPANSION INC TSOP1 TSOP1-R, 40 compliant EAR99 8542.32.00.51
AM29LV004BB-120FE
 Spansion 		Check for Price No Obsolete 4.1943 Mbit 8 16K,8K,32K,64K 512KX8 3 V 120 ns FLASH MIN 1000K WRITE CYCLES; 20 YEAR DATA RETENTION; BOTTOM BOOT BLOCK BOTTOM YES YES 20 1000000 Write/Erase Cycles 1 1,2,1,7 512000 524.288 k ASYNCHRONOUS PARALLEL 3 V YES YES 5 µA 30 µA 3.6 V 2.7 V CMOS MILITARY YES NOR TYPE R-PDSO-G40 Not Qualified e0 3 125 °C -55 °C 260 40 PLASTIC/EPOXY TSOP1-R TSSOP40,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 500 µm DUAL 1.2 mm 18.4 mm 10 mm SPANSION INC TSOP1 TSOP1-R, TSSOP40,.8,20 40 not_compliant 3A001.A.2.C 8542.32.00.51
AM29LV004BB-120FI
 Spansion 		Check for Price No Obsolete 4.1943 Mbit 8 16K,8K,32K,64K 512KX8 3 V 120 ns FLASH MIN 1000K WRITE CYCLES; 20 YEAR DATA RETENTION; BOTTOM BOOT BLOCK BOTTOM YES YES 20 1000000 Write/Erase Cycles 1 1,2,1,7 512000 524.288 k ASYNCHRONOUS PARALLEL 3 V YES YES 5 µA 30 µA 3.6 V 2.7 V CMOS INDUSTRIAL YES NOR TYPE R-PDSO-G40 Not Qualified e0 3 85 °C -40 °C 260 40 PLASTIC/EPOXY TSOP1-R TSSOP40,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 500 µm DUAL 1.2 mm 18.4 mm 10 mm SPANSION INC TSOP1 TSOP1-R, TSSOP40,.8,20 40 not_compliant EAR99 8542.32.00.51
AM29LV004BB-120FD
 Spansion 		Check for Price Yes Obsolete 4.1943 Mbit 8 512KX8 3 V 120 ns FLASH MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION; BOTTOM BOOT BLOCK BOTTOM 20 1 512000 524.288 k ASYNCHRONOUS PARALLEL 3 V 3.6 V 2.7 V CMOS COMMERCIAL NOR TYPE R-PDSO-G40 Not Qualified e3 70 °C 40 PLASTIC/EPOXY TSOP1-R RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN GULL WING 500 µm DUAL 1.2 mm 18.4 mm 10 mm SPANSION INC TSOP1 TSOP1-R, 40 compliant EAR99 8542.32.00.51
AM29LV004BB-120FE
 AMD 		Check for Price No Transferred 4.1943 Mbit 8 16K,8K,32K,64K 512KX8 3 V 120 ns FLASH MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION BOTTOM YES YES 20 1000000 Write/Erase Cycles 1 1,2,1,7 512000 524.288 k ASYNCHRONOUS PARALLEL 3 V YES YES 5 µA 30 µA 3.6 V 2.7 V CMOS MILITARY YES NOR TYPE R-PDSO-G40 Not Qualified e0 125 °C -55 °C 40 PLASTIC/EPOXY TSOP1-R TSSOP40,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 500 µm DUAL 1.2 mm 18.4 mm 10 mm ADVANCED MICRO DEVICES INC TSOP1 TSOP1-R, TSSOP40,.8,20 40 unknown 3A001.A.2.C 8542.32.00.51
AM29LV004BB-120FI
 AMD 		Check for Price No Transferred 4.1943 Mbit 8 16K,8K,32K,64K 512KX8 3 V 120 ns FLASH MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION BOTTOM YES YES 20 1000000 Write/Erase Cycles 1 1,2,1,7 512000 524.288 k ASYNCHRONOUS PARALLEL 3 V YES YES 5 µA 30 µA 3.6 V 2.7 V CMOS INDUSTRIAL YES NOR TYPE R-PDSO-G40 Not Qualified e0 85 °C -40 °C 40 PLASTIC/EPOXY TSOP1-R TSSOP40,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 500 µm DUAL 1.2 mm 18.4 mm 10 mm ADVANCED MICRO DEVICES INC TSOP1 TSOP1-R, TSSOP40,.8,20 40 unknown EAR99 8542.32.00.51
AM29LV004BB-120FC
 AMD 		Check for Price No Transferred 4.1943 Mbit 8 16K,8K,32K,64K 512KX8 3 V 120 ns FLASH MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION BOTTOM YES YES 20 1000000 Write/Erase Cycles 1 1,2,1,7 512000 524.288 k ASYNCHRONOUS PARALLEL 3 V YES YES 5 µA 30 µA 3.6 V 2.7 V CMOS COMMERCIAL YES NOR TYPE R-PDSO-G40 Not Qualified e0 70 °C 40 PLASTIC/EPOXY TSOP1-R TSSOP40,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 500 µm DUAL 1.2 mm 18.4 mm 10 mm ADVANCED MICRO DEVICES INC TSOP1 TSOP1-R, TSSOP40,.8,20 40 unknown EAR99 8542.32.00.51