Parametric results for: AM29F400BB-55EE0 under Flash Memories

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Manufacturer Part Number: am29f400bb55ee0
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AM29F400BB-55EE0
Cypress Semiconductor
Check for Price No Obsolete 4.1943 Mbit 16 256KX16 5 V 55 ns FLASH BOTTOM BOOT BLOCK 8 BOTTOM 1 256000 262.144 k ASYNCHRONOUS PARALLEL 5 V 5.5 V 4.5 V CMOS MILITARY NOR TYPE R-PDSO-G48 e0 125 °C -55 °C 48 PLASTIC/EPOXY TSSOP RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES TIN LEAD GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm CYPRESS SEMICONDUCTOR CORP MO-142BDD, TSOP-48 compliant 3A001.A.2.C 8542.32.00.51
AM29F400BB-55EE0
AMD
Check for Price No Transferred 4.1943 Mbit 16 16K,8K,32K,64K 256KX16 5 V 55 ns FLASH MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION 8 BOTTOM YES YES 20 1000000 Write/Erase Cycles 1 1,2,1,7 256000 262.144 k ASYNCHRONOUS PARALLEL 5 V YES 5 µA 60 µA 5.5 V 4.5 V CMOS MILITARY YES NOR TYPE R-PDSO-G48 Not Qualified e0 125 °C -55 °C 48 PLASTIC/EPOXY TSOP1 TSSOP48,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm ADVANCED MICRO DEVICES INC TSOP1, TSSOP48,.8,20 unknown 3A001.A.2.C 8542.32.00.51 TSOP1 48
AM29F400BB-55EE0
Spansion
Check for Price No No Obsolete 4.1943 Mbit 16 16K,8K,32K,64K 256KX16 5 V 55 ns FLASH BOTTOM BOOT BLOCK 8 BOTTOM YES YES 1000000 Write/Erase Cycles 1 1,2,1,7 256000 262.144 k ASYNCHRONOUS PARALLEL 5 V YES 5 µA 60 µA 5.5 V 4.5 V CMOS MILITARY YES NOR TYPE R-PDSO-G48 Not Qualified e0 3 125 °C -55 °C 260 48 PLASTIC/EPOXY TSOP1 TSSOP48,.8,20 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 500 µm DUAL 1.2 mm 18.4 mm 12 mm SPANSION INC MO-142BDD, TSOP-48 not_compliant 3A001.A.2.C 8542.32.00.51 TSOP1 48