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AM29F040B-120EDB
Spansion
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Check for Price | Yes | Yes | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 5 V | 120 ns | FLASH | 1000K PROGRAM/ERASE CYCLES; DATA RETENTION 20 YEARS | 20 | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | COMMERCIAL | NOR TYPE | R-PDSO-G32 | Not Qualified | e3 | 3 | 70 °C | 32 | PLASTIC/EPOXY | TSOP1 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | SPANSION INC | TSOP | TSOP1, | 32 | compliant | EAR99 | 8542.32.00.51 | |||||||||||||||||
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AM29F040B-150EK
Spansion
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Check for Price | Yes | Obsolete | 4.1943 Mbit | 8 | 64K | 512KX8 | 5 V | 150 ns | FLASH | YES | YES | 1000000 Write/Erase Cycles | 1 | 8 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 5 V | 5 µA | 40 µA | 5.5 V | 4.5 V | CMOS | MILITARY | YES | NOR TYPE | R-PDSO-G32 | Not Qualified | e3 | 3 | 125 °C | -55 °C | 260 | 40 | 32 | PLASTIC/EPOXY | TSOP1 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | MATTE TIN | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | SPANSION INC | TSOP1 | LEAD FREE, MO-142BD, TSOP-32 | 32 | unknown | 3A001.A.2.C | 8542.32.00.51 | ||||||||
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AM29F040B-120FEB
Spansion
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Check for Price | No | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 5 V | 120 ns | FLASH | 1000K PROGRAM/ERASE CYCLES; DATA RETENTION 20 YEARS | 20 | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | MILITARY | NOR TYPE | R-PDSO-G32 | Not Qualified | e0 | 3 | 125 °C | -55 °C | 32 | PLASTIC/EPOXY | TSOP1-R | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | SPANSION INC | TSOP | TSOP1-R, | 32 | compliant | 3A001.A.2.C | 8542.32.00.51 | |||||||||||||||||
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AM29F040B-150ECB
Spansion
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Check for Price | No | Obsolete | 4.1943 Mbit | 8 | 512KX8 | 5 V | 150 ns | FLASH | 1000K PROGRAM/ERASE CYCLES; DATA RETENTION 20 YEARS | 20 | 1 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 5 V | 5.5 V | 4.5 V | CMOS | COMMERCIAL | NOR TYPE | R-PDSO-G32 | Not Qualified | e0 | 3 | 70 °C | 260 | 32 | PLASTIC/EPOXY | TSOP1 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | SPANSION INC | TSOP | TSOP1, | 32 | compliant | EAR99 | 8542.32.00.51 | |||||||||||||||||
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AM29F040B-150PI
Cypress Semiconductor
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Check for Price | No | Active | 4.1943 Mbit | 8 | 64K | 512KX8 | 5 V | 5 V | 150 ns | FLASH | YES | YES | 1000000 Write/Erase Cycles | 8 | 512000 | 524.288 k | PARALLEL | 5 µA | 40 µA | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDIP-T32 | Not Qualified | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | CYPRESS SEMICONDUCTOR CORP | compliant | |||||||||||||||||||||||||
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AM29F040B-150PF
AMD
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Check for Price | Yes | Transferred | 4.1943 Mbit | 8 | 64K | 512KX8 | 5 V | 150 ns | FLASH | YES | YES | 1000000 Write/Erase Cycles | 1 | 8 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 5 V | 5 µA | 40 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDIP-T32 | Not Qualified | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 5.715 mm | 42.037 mm | 15.24 mm | ADVANCED MICRO DEVICES INC | DIP | DIP, DIP32,.6 | 32 | unknown | EAR99 | 8542.32.00.51 | |||||||||||||
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AM29F040B-120PIB
AMD
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Check for Price | No | Transferred | 4.1943 Mbit | 8 | 64K | 512KX8 | 5 V | 120 ns | FLASH | 1000K PROGRAM/ERASE CYCLES; DATA RETENTION 20 YEARS | YES | YES | 20 | 100000 Write/Erase Cycles | 1 | 8 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 V | 5 µA | 40 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDIP-T32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | 5.715 mm | 42.037 mm | 15.24 mm | ADVANCED MICRO DEVICES INC | DIP | DIP, DIP32,.6 | 32 | unknown | EAR99 | 8542.32.00.51 | ||||||||
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AM29F040B-120FI
AMD
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Check for Price | No | Transferred | 4.1943 Mbit | 8 | 64K | 512KX8 | 5 V | 120 ns | FLASH | MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION | YES | YES | 20 | 1000000 Write/Erase Cycles | 1 | 8 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 5 V | YES | 5 µA | 40 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDSO-G32 | Not Qualified | e0 | 85 °C | -40 °C | 32 | PLASTIC/EPOXY | TSOP1-R | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Tin/Lead (Sn/Pb) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | ADVANCED MICRO DEVICES INC | TSOP1 | TSOP1-R, TSSOP32,.8,20 | 32 | unknown | EAR99 | 8542.32.00.51 | |||||||
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AM29F040B-120PF
Spansion
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Check for Price | Yes | Obsolete | 4.1943 Mbit | 8 | 64K | 512KX8 | 5 V | 120 ns | FLASH | YES | YES | 1000000 Write/Erase Cycles | 1 | 8 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 5 V | 5 µA | 40 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | YES | NOR TYPE | R-PDIP-T32 | Not Qualified | e3 | 3 | 85 °C | -40 °C | 260 | 40 | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 5.715 mm | 42.037 mm | 15.24 mm | SPANSION INC | DIP | LEAD FREE, PLASTIC, MO-015AP, DIP-32 | 32 | unknown | EAR99 | 8542.32.00.51 | ||||||||
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AM29F040B-120JD
AMD
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Check for Price | Yes | Transferred | 4.1943 Mbit | 8 | 64K | 512KX8 | 5 V | 120 ns | FLASH | YES | YES | 1000000 Write/Erase Cycles | 1 | 8 | 512000 | 524.288 k | ASYNCHRONOUS | PARALLEL | 5 V | 5 µA | 40 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | YES | NOR TYPE | R-PQCC-J32 | Not Qualified | 70 °C | 32 | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | YES | J BEND | 1.27 mm | QUAD | 3.556 mm | 13.97 mm | 11.43 mm | ADVANCED MICRO DEVICES INC | LCC | LEAD FREE, PLASTIC, MO-052AE, LCC-32 | 32 | unknown | EAR99 | 8542.32.00.51 |