Parametric results for: AM29F017D-120F4E under Flash Memories

All Filters Access Time-Max Additional Feature Command User Interface Common Flash Interface Data Polling Data Retention Time-Min JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Power Supplies Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

120 ns 3

3 hits Apply

MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION 1

3 hits Apply

YES 3

3 hits Apply

YES 3

3 hits Apply

YES 3

3 hits Apply

20 1

3 hits Apply

R-PDSO-G40 3

3 hits Apply

e0 2

3 hits Apply

18.4 mm 2

3 hits Apply

Manufacturer (3)

AMD 1 Cypress Semiconductor 1 Spansion 1

3 hits Apply

Memory Density (1)

16.7772 Mbit 3

3 hits Apply

FLASH 3

3 hits Apply

Memory Width (1)

8 3

3 hits Apply

3 1

3 hits Apply

1.0 2

3 hits Apply

32 3

3 hits Apply

40 3

3 hits Apply

2.0972 M 3

3 hits Apply

2000000.0 3

3 hits Apply

ASYNCHRONOUS 2

3 hits Apply

125.0 °C 3

3 hits Apply

-55.0 °C 3

3 hits Apply

Organization (1)

2MX8 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

TSOP1-R 1 TSSOP 2

3 hits Apply

TSSOP40,.8,20 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE, THIN PROFILE 1 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 2

3 hits Apply

Power Supplies (1)

5 V 1

3 hits Apply

Sector Size (1)

64K 3

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 3

3 hits Apply