Parametric results for: AM29F016D-120E4C under Flash Memories

All Filters Access Time-Max Additional Feature Command User Interface Common Flash Interface Data Polling Data Retention Time-Min JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

120 ns 3

3 hits Apply

MINIMUM 1000K PROGRAM/ERASE CYCLE ;20 YEAR DATA RETENTION 2

3 hits Apply

YES 2

3 hits Apply

YES 2

3 hits Apply

YES 2

3 hits Apply

20 1

3 hits Apply

R-PDSO-G40 3

3 hits Apply

e0 2

3 hits Apply

18.4 mm 3

3 hits Apply

Manufacturer (3)

AMD 1 Rochester Electronics LLC 1 Spansion 1

3 hits Apply

Memory Density (1)

16.7772 Mbit 3

3 hits Apply

FLASH 3

3 hits Apply

Memory Width (1)

8 3

3 hits Apply

3 1

3 hits Apply

1.0 3

3 hits Apply

32 2

3 hits Apply

40 3

3 hits Apply

2.0972 M 3

3 hits Apply

2000000.0 3

3 hits Apply

ASYNCHRONOUS 3

3 hits Apply

70.0 °C 3

3 hits Apply

0.0 °C 3

3 hits Apply

Organization (1)

2MX8 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

TSOP1 2 TSSOP 1

3 hits Apply

TSSOP40,.8,20 2

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE, THIN PROFILE 2 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 1

3 hits Apply

Sector Size (1)

64K 2

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 3

3 hits Apply