Parametric results for: AM29F010B-120FE under Flash Memories
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AM29F010B-120FE
AMD
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Check for Price | No | Transferred | 1.0486 Mbit | 8 | 16K | 128KX8 | 5 V | 120 ns | FLASH | YES | YES | 1000000 Write/Erase Cycles | 1 | 8 | 128000 | 131.072 k | ASYNCHRONOUS | PARALLEL | 5 V | YES | 5 µA | 40 µA | 5.5 V | 4.5 V | CMOS | MILITARY | YES | NOR TYPE | R-PDSO-G32 | Not Qualified | e0 | 125 °C | -55 °C | 32 | PLASTIC/EPOXY | TSOP1-R | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Tin/Lead (Sn/Pb) | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | ADVANCED MICRO DEVICES INC | TSOP | TSOP1-R, TSSOP32,.8,20 | 32 | unknown | 3A001.A.2.C | 8542.32.00.51 | ||||||
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AM29F010B-120FE
Spansion
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Check for Price | No | No | Obsolete | 1.0486 Mbit | 8 | 16K | 128KX8 | 5 V | 120 ns | FLASH | YES | YES | 1000000 Write/Erase Cycles | 1 | 8 | 128000 | 131.072 k | ASYNCHRONOUS | PARALLEL | 5 V | YES | 5 µA | 40 µA | 5.5 V | 4.5 V | CMOS | MILITARY | YES | NOR TYPE | R-PDSO-G32 | Not Qualified | e0 | 3 | 125 °C | -55 °C | 260 | 32 | PLASTIC/EPOXY | TSSOP | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | TIN LEAD | GULL WING | 500 µm | DUAL | 1.2 mm | 18.4 mm | 8 mm | SPANSION INC | TSOP1 | MO-142BD, TSOP-32 | 32 | not_compliant | 3A001.A.2.C | 8542.32.00.51 | |||
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AM29F010B-120FE
Cypress Semiconductor
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Check for Price | No | Active | 1.0486 Mbit | 8 | 16K | 128KX8 | 5 V | 5 V | 120 ns | FLASH | YES | YES | 1000000 Write/Erase Cycles | 8 | 128000 | 131.072 k | PARALLEL | YES | 5 µA | 40 µA | CMOS | MILITARY | YES | NOR TYPE | R-PDSO-G32 | Not Qualified | 125 °C | -55 °C | 32 | PLASTIC/EPOXY | TSSOP | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | GULL WING | 500 µm | DUAL | CYPRESS SEMICONDUCTOR CORP | compliant |