Parametric results for: AM29BL802CB-80RDTE1 under Flash Memories

All Filters Access Time-Max Additional Feature Boot Block Command User Interface Data Polling Data Retention Time-Min JESD-30 Code JESD-609 Code Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Power Supplies Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

80 ns 3

3 hits Apply

MINIMUM 100K WRITE CYCLES; 20 YEAR DATA RETENTION 1 SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK 1

3 hits Apply

BOTTOM 3

3 hits Apply

YES 2

3 hits Apply

YES 2

3 hits Apply

20 1

3 hits Apply

R-XUUC-N51 2

3 hits Apply

e0 1

3 hits Apply

Manufacturer (3)

AMD 1 Cypress Semiconductor 1 Spansion 1

3 hits Apply

Memory Density (1)

8.3886 Mbit 3

3 hits Apply

FLASH 3

3 hits Apply

Memory Width (1)

16 2

3 hits Apply

1.0 2

3 hits Apply

1,2,1,3,2 2

3 hits Apply

51 2

3 hits Apply

524.288 k 3

3 hits Apply

512000.0 3

3 hits Apply

ASYNCHRONOUS 2

3 hits Apply

125.0 °C 3

3 hits Apply

-55.0 °C 3

3 hits Apply

Organization (1)

512KX16 3

3 hits Apply

UNSPECIFIED 2

3 hits Apply

DIE 2

3 hits Apply

DIE OR CHIP 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

UNCASED CHIP 2

3 hits Apply

Power Supplies (1)

3.3 V 1

3 hits Apply

Sector Size (2)

(8,4,48,64,128)K 1 8K,4K,48K,64K,128K 1

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 3

3 hits Apply