Parametric results for: AGR21180EU under RF Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

HIGH RELIABILITY 3

3 hits Apply

SOURCE 3

3 hits Apply

Configuration (1)

SINGLE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

65 V 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

Highest Frequency Band (1)

S BAND 3

3 hits Apply

R-CDFP-F4 3

3 hits Apply

e0 2

3 hits Apply

Manufacturer (3)

Avago Technologies 1 Broadcom Limited 1 LSI Corporation 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

4 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

150.0 °C 3

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLATPACK 3

3 hits Apply

Active 2 Transferred 1

3 hits Apply

No 1

3 hits Apply

225 2

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

500 W 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply