Parametric results for: AAT7361 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 1

2 hits Apply

DS Breakdown Voltage-Min (1)

20 V 1

2 hits Apply

Drain Current-Max (ID) (1)

3 A 1

2 hits Apply

Drain-source On Resistance-Max (1)

100 mΩ 1

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 1

2 hits Apply

R-PDSO-C8 1

2 hits Apply

Manufacturer (2)

Advanced AnalogicTech 1 Skyworks Solutions Inc 1

2 hits Apply

1 1

2 hits Apply

Number of Elements (1)

2 1

2 hits Apply

Number of Terminals (1)

8 1

2 hits Apply

ENHANCEMENT MODE 1

2 hits Apply

150.0 °C 1

2 hits Apply

-55.0 °C 1

2 hits Apply

PLASTIC/EPOXY 1

2 hits Apply

RECTANGULAR 1

2 hits Apply

SMALL OUTLINE 1

2 hits Apply

Active 1 Transferred 1

2 hits Apply

260 1

2 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 1

2 hits Apply

1.4 W 1

2 hits Apply

1.4 W 1

2 hits Apply

Surface Mount (1)

YES 1

2 hits Apply