Parametric results for: A3G35H100-04SR3 under RF Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min FET Technology Highest Frequency Band JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Gain-Min (Gp) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS 1

1 hit Apply

DS Breakdown Voltage-Min (1)

150 V 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

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Highest Frequency Band (1)

S BAND 1

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R-CDFP-F4 1

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Manufacturer (1)

NXP Semiconductors 1

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Number of Elements (1)

2 1

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Number of Terminals (1)

4 1

1 hit Apply

DEPLETION MODE 1

1 hit Apply

225.0 °C 1

1 hit Apply

-55.0 °C 1

1 hit Apply

CERAMIC, METAL-SEALED COFIRED 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

FLATPACK 1

1 hit Apply

Obsolete 1

1 hit Apply

260 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

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Power Gain-Min (Gp) (1)

13.0 dB 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply