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93LC56A-I/SN
Microchip Technology Inc
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93LC56AT-I/OT
Microchip Technology Inc
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93LC56A/ST
Microchip Technology Inc
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93LC56A-I/MS
Microchip Technology Inc
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93LC56AX-I/SN
Microchip Technology Inc
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93LC56AT-I/SN
Microchip Technology Inc
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93LC56AXT-I/SN
Microchip Technology Inc
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93LC56A-I/ST
Microchip Technology Inc
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93LC56AT-I/MC
Microchip Technology Inc
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93LC56AX-E/SN
Microchip Technology Inc
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Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Composite Price
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Pbfree Code
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Rohs Code
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Part Life Cycle Code
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Memory Density
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Memory Width | Organization |
Supply Voltage-Nom (Vsup)
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Clock Frequency-Max (fCLK) |
Memory IC Type
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Additional Feature
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Data Retention Time-Min
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Endurance
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Number of Functions | Number of Ports | Number of Words Code | Number of Words |
Operating Mode
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Output Characteristics
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Parallel/Serial
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Programming Voltage
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Ready/Busy
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Reverse Pinout
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Serial Bus Type
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Standby Current-Max
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Supply Current-Max
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Supply Voltage-Max (Vsup)
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Supply Voltage-Min (Vsup)
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Technology |
Temperature Grade
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Toggle Bit
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Write Cycle Time-Max (tWC)
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Write Protection
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JESD-30 Code
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Qualification Status
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JESD-609 Code
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Moisture Sensitivity Level
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Operating Temperature-Max
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Operating Temperature-Min
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Peak Reflow Temperature (Cel)
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Screening Level
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Time@Peak Reflow Temperature-Max (s)
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Number of Terminals
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Package Body Material
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Package Code
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Package Equivalence Code
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Package Shape
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Package Style
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Surface Mount
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Terminal Finish
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Terminal Form
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Terminal Pitch
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Terminal Position
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Seated Height-Max
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Length
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Width
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Ihs Manufacturer
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Part Package Code
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Package Description
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Pin Count
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Reach Compliance Code
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ECCN Code
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HTS Code
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Samacsys Manufacturer
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Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 5 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | SOIC-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||
Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 5 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G6 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 6 | PLASTIC/EPOXY | LSSOP | TSOP5/6,.11,37 | RECTANGULAR | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 950 µm | DUAL | 1.45 mm | 2.9 mm | 1.55 mm | MICROCHIP TECHNOLOGY INC | SOT-23 | SC-74A, SOT-23, 6 PIN | 6 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||
Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 3 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | SERIAL | 3 V | MICROWIRE | 1 µA | 1.5 µA | 6 V | 2.5 V | CMOS | COMMERCIAL | 6 ms | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | AEC-Q100 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | MATTE TIN | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | SOIC | TSSOP-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||||||||
Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 3 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | S-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.19 | SQUARE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.1 mm | 3 mm | 3 mm | MICROCHIP TECHNOLOGY INC | MSOP | MSOP-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||||
Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 3 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | SOIC-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||
Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 5 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | SOIC-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||
Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 3 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | SOIC-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||
Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 5 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | SOIC | TSSOP-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||
Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 5 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-N8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.11,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Matte Tin (Sn) | NO LEAD | 500 µm | DUAL | 1 mm | 3 mm | 2 mm | MICROCHIP TECHNOLOGY INC | DFN | DFN-8 | 8 | compliant | EAR99 | 8542.32.00.51 | ||||
Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 3 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 5 µA | 2 µA | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 125 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | SOIC-8 | 8 | compliant | EAR99 | 8542.32.00.51 |
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93LC56A-I/SN
Microchip Technology Inc
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$0.2640 | Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 5 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | SOIC-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||
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93LC56AT-I/OT
Microchip Technology Inc
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$0.3044 | Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 5 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G6 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 6 | PLASTIC/EPOXY | LSSOP | TSOP5/6,.11,37 | RECTANGULAR | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 950 µm | DUAL | 1.45 mm | 2.9 mm | 1.55 mm | MICROCHIP TECHNOLOGY INC | SOT-23 | SC-74A, SOT-23, 6 PIN | 6 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||||
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93LC56A/ST
Microchip Technology Inc
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$0.3181 | Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 3 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | SERIAL | 3 V | MICROWIRE | 1 µA | 1.5 µA | 6 V | 2.5 V | CMOS | COMMERCIAL | 6 ms | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | AEC-Q100 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | MATTE TIN | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | SOIC | TSSOP-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||||||||
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93LC56A-I/MS
Microchip Technology Inc
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$0.3181 | Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 3 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | S-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.19 | SQUARE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.1 mm | 3 mm | 3 mm | MICROCHIP TECHNOLOGY INC | MSOP | MSOP-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||||
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93LC56AX-I/SN
Microchip Technology Inc
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$0.3376 | Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 3 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | SOIC-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||
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93LC56AT-I/SN
Microchip Technology Inc
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$0.3470 | Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 5 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | SOIC-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||
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93LC56AXT-I/SN
Microchip Technology Inc
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$0.3470 | Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 3 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | SOIC-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||
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93LC56A-I/ST
Microchip Technology Inc
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$0.3958 | Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 5 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | SOIC | TSSOP-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||
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93LC56AT-I/MC
Microchip Technology Inc
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$0.4447 | Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 5 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | YES | 6 ms | SOFTWARE | R-PDSO-N8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.11,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Matte Tin (Sn) | NO LEAD | 500 µm | DUAL | 1 mm | 3 mm | 2 mm | MICROCHIP TECHNOLOGY INC | DFN | DFN-8 | 8 | compliant | EAR99 | 8542.32.00.51 | |||||
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93LC56AX-E/SN
Microchip Technology Inc
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$0.4700 | Yes | Yes | Active | 2.048 kbit | 8 | 256X8 | 3 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 256 | 256 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 5 µA | 2 µA | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | YES | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 125 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | SOIC-8 | 8 | compliant | EAR99 | 8542.32.00.51 |