Parametric results for: 93lc56a/a under EEPROMs

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Manufacturer Part Number: 93lc56a
Select parts from the table below to compare.
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Select Parts Part Number
93LC56A-I/SN
Microchip Technology Inc
93LC56AT-I/OT
Microchip Technology Inc
93LC56A/ST
Microchip Technology Inc
93LC56A-I/MS
Microchip Technology Inc
93LC56AX-I/SN
Microchip Technology Inc
93LC56AT-I/SN
Microchip Technology Inc
93LC56AXT-I/SN
Microchip Technology Inc
93LC56A-I/ST
Microchip Technology Inc
93LC56AT-I/MC
Microchip Technology Inc
93LC56AX-E/SN
Microchip Technology Inc
Most Relevant Technical Compliance Operating Conditions Physical Dimensions Other
Composite Price
Pbfree Code
Rohs Code
Part Life Cycle Code
Memory Density
Memory Width Organization Supply Voltage-Nom (Vsup)
Clock Frequency-Max (fCLK) Memory IC Type
Additional Feature
Data Retention Time-Min
Endurance
Number of Functions Number of Ports Number of Words Code Number of Words Operating Mode
Output Characteristics
Parallel/Serial
Programming Voltage
Ready/Busy
Reverse Pinout
Serial Bus Type
Standby Current-Max
Supply Current-Max
Supply Voltage-Max (Vsup)
Supply Voltage-Min (Vsup)
Technology Temperature Grade
Toggle Bit
Write Cycle Time-Max (tWC)
Write Protection
JESD-30 Code
Qualification Status
JESD-609 Code
Moisture Sensitivity Level
Operating Temperature-Max
Operating Temperature-Min
Peak Reflow Temperature (Cel)
Screening Level
Time@Peak Reflow Temperature-Max (s)
Number of Terminals
Package Body Material
Package Code
Package Equivalence Code
Package Shape
Package Style
Surface Mount
Terminal Finish
Terminal Form
Terminal Pitch
Terminal Position
Seated Height-Max
Length
Width
Ihs Manufacturer
Part Package Code
Package Description
Pin Count
Reach Compliance Code
ECCN Code
HTS Code
Samacsys Manufacturer
Yes Yes Active 2.048 kbit 8 256X8 5 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOIC SOIC-8 8 compliant EAR99 8542.32.00.51 Microchip
Yes Yes Active 2.048 kbit 8 256X8 5 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-G6 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 40 6 PLASTIC/EPOXY LSSOP TSOP5/6,.11,37 RECTANGULAR SMALL OUTLINE, LOW PROFILE, SHRINK PITCH YES Matte Tin (Sn) GULL WING 950 µm DUAL 1.45 mm 2.9 mm 1.55 mm MICROCHIP TECHNOLOGY INC SOT-23 SC-74A, SOT-23, 6 PIN 6 compliant EAR99 8542.32.00.51 Microchip
Yes Yes Active 2.048 kbit 8 256X8 3 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS SERIAL 3 V MICROWIRE 1 µA 1.5 µA 6 V 2.5 V CMOS COMMERCIAL 6 ms R-PDSO-G8 Not Qualified e3 1 70 °C 260 AEC-Q100 40 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES MATTE TIN GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm MICROCHIP TECHNOLOGY INC SOIC TSSOP-8 8 compliant EAR99 8542.32.00.51 Microchip
Yes Yes Active 2.048 kbit 8 256X8 3 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE S-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 8 PLASTIC/EPOXY TSSOP TSSOP8,.19 SQUARE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Matte Tin (Sn) GULL WING 650 µm DUAL 1.1 mm 3 mm 3 mm MICROCHIP TECHNOLOGY INC MSOP MSOP-8 8 compliant EAR99 8542.32.00.51 Microchip
Yes Yes Active 2.048 kbit 8 256X8 3 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOIC SOIC-8 8 compliant EAR99 8542.32.00.51 Microchip
Yes Yes Active 2.048 kbit 8 256X8 5 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOIC SOIC-8 8 compliant EAR99 8542.32.00.51 Microchip
Yes Yes Active 2.048 kbit 8 256X8 3 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOIC SOIC-8 8 compliant EAR99 8542.32.00.51 Microchip
Yes Yes Active 2.048 kbit 8 256X8 5 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 40 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Matte Tin (Sn) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm MICROCHIP TECHNOLOGY INC SOIC TSSOP-8 8 compliant EAR99 8542.32.00.51 Microchip
Yes Yes Active 2.048 kbit 8 256X8 5 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-N8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 40 8 PLASTIC/EPOXY HVSON SOLCC8,.11,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES Matte Tin (Sn) NO LEAD 500 µm DUAL 1 mm 3 mm 2 mm MICROCHIP TECHNOLOGY INC DFN DFN-8 8 compliant EAR99 8542.32.00.51
Yes Yes Active 2.048 kbit 8 256X8 3 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 5 µA 2 µA 5.5 V 2.5 V CMOS AUTOMOTIVE YES 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 125 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOIC SOIC-8 8 compliant EAR99 8542.32.00.51
Compare
93LC56A-I/SN
Microchip Technology Inc
$0.2640 Yes Yes Active 2.048 kbit 8 256X8 5 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOIC SOIC-8 8 compliant EAR99 8542.32.00.51 Microchip
93LC56AT-I/OT
Microchip Technology Inc
$0.3044 Yes Yes Active 2.048 kbit 8 256X8 5 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-G6 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 40 6 PLASTIC/EPOXY LSSOP TSOP5/6,.11,37 RECTANGULAR SMALL OUTLINE, LOW PROFILE, SHRINK PITCH YES Matte Tin (Sn) GULL WING 950 µm DUAL 1.45 mm 2.9 mm 1.55 mm MICROCHIP TECHNOLOGY INC SOT-23 SC-74A, SOT-23, 6 PIN 6 compliant EAR99 8542.32.00.51 Microchip
93LC56A/ST
Microchip Technology Inc
$0.3181 Yes Yes Active 2.048 kbit 8 256X8 3 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS SERIAL 3 V MICROWIRE 1 µA 1.5 µA 6 V 2.5 V CMOS COMMERCIAL 6 ms R-PDSO-G8 Not Qualified e3 1 70 °C 260 AEC-Q100 40 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES MATTE TIN GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm MICROCHIP TECHNOLOGY INC SOIC TSSOP-8 8 compliant EAR99 8542.32.00.51 Microchip
93LC56A-I/MS
Microchip Technology Inc
$0.3181 Yes Yes Active 2.048 kbit 8 256X8 3 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE S-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 8 PLASTIC/EPOXY TSSOP TSSOP8,.19 SQUARE SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Matte Tin (Sn) GULL WING 650 µm DUAL 1.1 mm 3 mm 3 mm MICROCHIP TECHNOLOGY INC MSOP MSOP-8 8 compliant EAR99 8542.32.00.51 Microchip
93LC56AX-I/SN
Microchip Technology Inc
$0.3376 Yes Yes Active 2.048 kbit 8 256X8 3 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOIC SOIC-8 8 compliant EAR99 8542.32.00.51 Microchip
93LC56AT-I/SN
Microchip Technology Inc
$0.3470 Yes Yes Active 2.048 kbit 8 256X8 5 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOIC SOIC-8 8 compliant EAR99 8542.32.00.51 Microchip
93LC56AXT-I/SN
Microchip Technology Inc
$0.3470 Yes Yes Active 2.048 kbit 8 256X8 3 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOIC SOIC-8 8 compliant EAR99 8542.32.00.51 Microchip
93LC56A-I/ST
Microchip Technology Inc
$0.3958 Yes Yes Active 2.048 kbit 8 256X8 5 V 2 MHz EEPROM 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 40 8 PLASTIC/EPOXY TSSOP TSSOP8,.25 RECTANGULAR SMALL OUTLINE, THIN PROFILE, SHRINK PITCH YES Matte Tin (Sn) GULL WING 650 µm DUAL 1.2 mm 4.4 mm 3 mm MICROCHIP TECHNOLOGY INC SOIC TSSOP-8 8 compliant EAR99 8542.32.00.51 Microchip
93LC56AT-I/MC
Microchip Technology Inc
$0.4447 Yes Yes Active 2.048 kbit 8 256X8 5 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 1 µA 2 µA 5.5 V 2.5 V CMOS INDUSTRIAL YES 6 ms SOFTWARE R-PDSO-N8 Not Qualified e3 1 85 °C -40 °C 260 TS 16949 40 8 PLASTIC/EPOXY HVSON SOLCC8,.11,20 RECTANGULAR SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE YES Matte Tin (Sn) NO LEAD 500 µm DUAL 1 mm 3 mm 2 mm MICROCHIP TECHNOLOGY INC DFN DFN-8 8 compliant EAR99 8542.32.00.51
93LC56AX-E/SN
Microchip Technology Inc
$0.4700 Yes Yes Active 2.048 kbit 8 256X8 3 V 2 MHz EEPROM 200 1000000 Write/Erase Cycles 1 1 256 256 words SYNCHRONOUS TOTEM POLE SERIAL YES NO MICROWIRE 5 µA 2 µA 5.5 V 2.5 V CMOS AUTOMOTIVE YES 6 ms SOFTWARE R-PDSO-G8 Not Qualified e3 1 125 °C -40 °C 260 TS 16949 30 8 PLASTIC/EPOXY SOP SOP8,.25 RECTANGULAR SMALL OUTLINE YES Matte Tin (Sn) GULL WING 1.27 mm DUAL 1.75 mm 4.9 mm 3.9 mm MICROCHIP TECHNOLOGY INC SOIC SOIC-8 8 compliant EAR99 8542.32.00.51