Parametric results for: 93lc46sn under EEPROMs

All Filters Additional Feature Alternate Memory Width Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS 2

3 hits Apply

8 1 16 2

Min - Max

3 hits Apply

Clock Frequency-Max (fCLK) (1)

2 MHz 3

3 hits Apply

40 2 200 1

Min - Max

3 hits Apply

1000000.0 Write/Erase Cycles 1

3 hits Apply

R-PDSO-G8 3

3 hits Apply

e3 3

3 hits Apply

4.9 mm 3

3 hits Apply

Manufacturer (1)

Microchip Technology Inc 3

3 hits Apply

Memory Density (1)

1.024 kbit 3

3 hits Apply

EEPROM 3

3 hits Apply

Memory Width (2)

8 2 16 1

Min - Max

3 hits Apply

1 3

3 hits Apply

1.0 3

3 hits Apply

1 1

3 hits Apply

8 3

3 hits Apply

64 words 1 128 words 2

Min (words) - Max (words)

3 hits Apply

64.0 1 128.0 2

Min - Max

3 hits Apply

SYNCHRONOUS 3

3 hits Apply

70.0 °C 3

3 hits Apply

0.0 °C 3

3 hits Apply

Organization (2)

128X8 2 64X16 1

3 hits Apply

3-STATE 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

SOP 3

3 hits Apply

SOP8,.23 1

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Supply Voltage-Nom (Vsup) (2)

3 V 1 4.5 V 2

Min (V) - Max (V)

3 hits Apply