Parametric results for: 93c76isn under EEPROMs

All Filters Additional Feature Alternate Memory Width Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

1000000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS; USER CONFIGURABLE AS 512 X 16 1

2 hits Apply

8 1 16 1

Min - Max

2 hits Apply

Clock Frequency-Max (fCLK) (1)

2 MHz 2

2 hits Apply

200 1

2 hits Apply

1000000.0 Write/Erase Cycles 1

2 hits Apply

R-PDSO-G8 2

2 hits Apply

e3 2

2 hits Apply

4.9 mm 1

2 hits Apply

Manufacturer (1)

Microchip Technology Inc 2

2 hits Apply

Memory Density (1)

8.192 kbit 2

2 hits Apply

EEPROM 2

2 hits Apply

Memory Width (2)

8 1 16 1

Min - Max

2 hits Apply

1 2

2 hits Apply

1.0 2

2 hits Apply

8 2

2 hits Apply

512 words 1 1.024 k 1

Min (words) - Max (words)

2 hits Apply

512.0 1 1000.0 1

Min - Max

2 hits Apply

SYNCHRONOUS 2

2 hits Apply

85.0 °C 2

2 hits Apply

-40.0 °C 2

2 hits Apply

Organization (2)

1KX8 1 512X16 1

2 hits Apply

3-STATE 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

SOP 2

2 hits Apply

SOP8,.25 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

5 V 2

2 hits Apply