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93AA76C-I/P
Microchip Technology Inc
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93AA76C-I/SN
Microchip Technology Inc
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93AA76CT-I/MNY
Microchip Technology Inc
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93AA76C-I/MS
Microchip Technology Inc
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93AA76CT-I/SN
Microchip Technology Inc
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93AA76CT-I/ST
Microchip Technology Inc
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93AA76CT-I/MS
Microchip Technology Inc
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93AA76C-I/ST
Microchip Technology Inc
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93AA76CT-I/MC
Microchip Technology Inc
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93AA76C-/P
Microchip Technology Inc
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| Most Relevant | Technical | Compliance | Operating Conditions | Physical | Dimensions | Other | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Composite Price
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Pbfree Code
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Rohs Code
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Part Life Cycle Code
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Memory Density
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Memory Width | Organization |
Supply Voltage-Nom (Vsup)
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Clock Frequency-Max (fCLK) |
Memory IC Type
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Alternate Memory Width
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Data Retention Time-Min
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Endurance
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Number of Functions | Number of Ports | Number of Words Code | Number of Words |
Operating Mode
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Output Characteristics
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Parallel/Serial
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Programming Voltage
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Ready/Busy
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Reverse Pinout
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Serial Bus Type
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Standby Current-Max
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Supply Current-Max
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Supply Voltage-Max (Vsup)
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Supply Voltage-Min (Vsup)
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Technology |
Temperature Grade
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Toggle Bit
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Write Cycle Time-Max (tWC)
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Write Protection
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JESD-30 Code
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Qualification Status
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JESD-609 Code
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Moisture Sensitivity Level
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Operating Temperature-Max
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Operating Temperature-Min
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Peak Reflow Temperature (Cel)
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Screening Level
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Time@Peak Reflow Temperature-Max (s)
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Number of Terminals
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Package Body Material
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Package Code
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Package Equivalence Code
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Package Shape
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Package Style
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Surface Mount
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Terminal Finish
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Terminal Form
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Terminal Pitch
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Terminal Position
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Seated Height-Max
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Length
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Width
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Ihs Manufacturer
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Part Package Code
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Package Description
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Pin Count
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Reach Compliance Code
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ECCN Code
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HTS Code
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Samacsys Manufacturer
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| Yes | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 1 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 5 ms | SOFTWARE | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | TS 16949 | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Matte Tin (Sn) | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.27 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | DIP | DIP-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||||
| Yes | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 1 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 5 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||
| Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 3 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | SERIAL | 2.5 V | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE/SOFTWARE | R-PDSO-N8 | Not Qualified | e4 | 85 °C | -40 °C | TS 16949 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.11,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | NICKEL PALLADIUM GOLD | NO LEAD | 500 µm | DUAL | 800 µm | 3 mm | 2 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | |||||||||||||
| Yes | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 1 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 5 ms | SOFTWARE | S-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.19 | SQUARE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.1 mm | 3 mm | 3 mm | MICROCHIP TECHNOLOGY INC | MSOP | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||
| Yes | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 3 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 5 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.91 mm | MICROCHIP TECHNOLOGY INC | SOIC | 8 | compliant | ||||||
| Yes | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 3 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 5 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | SOIC | 8 | compliant | ||||||
| Yes | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 3 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 5 ms | SOFTWARE | S-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.19 | SQUARE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.1 mm | 3 mm | 3 mm | MICROCHIP TECHNOLOGY INC | MSOP | 8 | compliant | ||||||
| Yes | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 1 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 5 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | SOIC | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||
| Yes | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 3 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 5 ms | SOFTWARE | R-PDSO-N8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.11,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Matte Tin (Sn) | NO LEAD | 500 µm | DUAL | 1 mm | 3 mm | 2 mm | MICROCHIP TECHNOLOGY INC | DFN | 8 | compliant | Microchip | |||||
| Active | 8.192 kbit | 16 | 512X16 | 3 V | 3 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 512 | 512 words | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | MICROWIRE | 100 µA | 3 µA | 6 V | 1.8 V | CMOS | COMMERCIAL | 5 ms | R-PDIP-T8 | 70 °C | TS 16949 | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 4.32 mm | 9.46 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | DIP, DIP8,.3 | compliant | EAR99 | 8542.32.00.51 |
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93AA76C-I/P
Microchip Technology Inc
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$0.0476 Buy | Yes | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 1 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 5 ms | SOFTWARE | R-PDIP-T8 | Not Qualified | e3 | 85 °C | -40 °C | TS 16949 | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | Matte Tin (Sn) | THROUGH-HOLE | 2.54 mm | DUAL | 5.334 mm | 9.27 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | DIP | DIP-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||||||
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93AA76C-I/SN
Microchip Technology Inc
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$0.4865 Buy | Yes | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 1 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 5 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||||
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93AA76CT-I/MNY
Microchip Technology Inc
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$0.5050 Buy | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 3 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | SERIAL | 2.5 V | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | 5 ms | HARDWARE/SOFTWARE | R-PDSO-N8 | Not Qualified | e4 | 85 °C | -40 °C | TS 16949 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.11,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | NICKEL PALLADIUM GOLD | NO LEAD | 500 µm | DUAL | 800 µm | 3 mm | 2 mm | MICROCHIP TECHNOLOGY INC | compliant | EAR99 | 8542.32.00.51 | ||||||||||||||
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93AA76C-I/MS
Microchip Technology Inc
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$0.5050 Buy | Yes | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 1 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 5 ms | SOFTWARE | S-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.19 | SQUARE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.1 mm | 3 mm | 3 mm | MICROCHIP TECHNOLOGY INC | MSOP | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||||
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93AA76CT-I/SN
Microchip Technology Inc
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$0.5330 Buy | Yes | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 3 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 5 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | Matte Tin (Sn) | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.91 mm | MICROCHIP TECHNOLOGY INC | SOIC | 8 | compliant | |||||||
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93AA76CT-I/ST
Microchip Technology Inc
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$0.5965 Buy | Yes | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 3 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 5 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | SOIC | 8 | compliant | |||||||
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93AA76CT-I/MS
Microchip Technology Inc
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$0.5965 Buy | Yes | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 3 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 5 ms | SOFTWARE | S-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.19 | SQUARE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.1 mm | 3 mm | 3 mm | MICROCHIP TECHNOLOGY INC | MSOP | 8 | compliant | |||||||
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93AA76C-I/ST
Microchip Technology Inc
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$0.5965 Buy | Yes | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 1 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 5 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | SOIC | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||||
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93AA76CT-I/MC
Microchip Technology Inc
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$0.6109 Buy | Yes | Yes | Active | 8.192 kbit | 16 | 512X16 | 2.5 V | 3 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 512 | 512 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 3 µA | 5.5 V | 1.8 V | CMOS | INDUSTRIAL | YES | 5 ms | SOFTWARE | R-PDSO-N8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | HVSON | SOLCC8,.11,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | YES | Matte Tin (Sn) | NO LEAD | 500 µm | DUAL | 1 mm | 3 mm | 2 mm | MICROCHIP TECHNOLOGY INC | DFN | 8 | compliant | Microchip | ||||||
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93AA76C-/P
Microchip Technology Inc
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Check for Price Buy | Active | 8.192 kbit | 16 | 512X16 | 3 V | 3 MHz | EEPROM | 8 | 200 | 1000000 Write/Erase Cycles | 1 | 512 | 512 words | SYNCHRONOUS | 3-STATE | SERIAL | 3 V | MICROWIRE | 100 µA | 3 µA | 6 V | 1.8 V | CMOS | COMMERCIAL | 5 ms | R-PDIP-T8 | 70 °C | TS 16949 | 8 | PLASTIC/EPOXY | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | NO | THROUGH-HOLE | 2.54 mm | DUAL | 4.32 mm | 9.46 mm | 7.62 mm | MICROCHIP TECHNOLOGY INC | DIP, DIP8,.3 | compliant | EAR99 | 8542.32.00.51 |