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93LC46BXT-I/SN
Microchip Technology Inc
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$0.2068 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 3 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | SOP, SOP8,.25 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||
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93LC46BT/SN
Microchip Technology Inc
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$0.2092 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 4.5 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | SERIAL | 4.5 V | MICROWIRE | 1 µA | 1.5 µA | 6 V | 2.5 V | CMOS | COMMERCIAL | 6 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | 0.150 INCH, PLASTIC, SOIC-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||||||||
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93LC46BT-I/SN
Microchip Technology Inc
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$0.2149 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 3 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||
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93LC46B/SN
Microchip Technology Inc
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$0.2368 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 4.5 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | SERIAL | 4.5 V | MICROWIRE | 1 µA | 1.5 µA | 6 V | 2.5 V | CMOS | COMMERCIAL | 6 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.23 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | 0.150 INCH, PLASTIC, SOIC-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||||||||
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93LC46B-I/SN
Microchip Technology Inc
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$0.2426 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 3 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||
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93LC46BT-I/MS
Microchip Technology Inc
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$0.2496 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 3 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 6 ms | SOFTWARE | S-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.19 | SQUARE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.1 mm | 3 mm | 3 mm | MICROCHIP TECHNOLOGY INC | MSOP | TSSOP, TSSOP8,.19 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||||
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93LC46BX-I/SN
Microchip Technology Inc
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$0.2524 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 3 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 30 | 8 | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE | YES | MATTE TIN | GULL WING | 1.27 mm | DUAL | 1.75 mm | 4.9 mm | 3.9 mm | MICROCHIP TECHNOLOGY INC | SOIC | SOP, SOP8,.25 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | |||
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93LC46BT-E/OT
Microchip Technology Inc
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$0.2532 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 3 V | 3 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 5 µA | 2 µA | 5.5 V | 2.5 V | CMOS | AUTOMOTIVE | 6 ms | SOFTWARE | R-PDSO-G6 | Not Qualified | e3 | 1 | 125 °C | -40 °C | 260 | TS 16949 | 40 | 6 | PLASTIC/EPOXY | LSSOP | TSOP5/6,.11,37 | RECTANGULAR | SMALL OUTLINE, LOW PROFILE, SHRINK PITCH | YES | MATTE TIN | GULL WING | 950 µm | DUAL | 1.45 mm | 2.95 mm | 1.63 mm | MICROCHIP TECHNOLOGY INC | SOT-23 | LSSOP, TSOP5/6,.11,37 | 6 | compliant | Microchip | ||||||
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93LC46BT/ST
Microchip Technology Inc
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$0.2609 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 4.5 V | 2 MHz | EEPROM | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | SERIAL | 4.5 V | MICROWIRE | 1 µA | 1.5 µA | 6 V | 2.5 V | CMOS | COMMERCIAL | 6 ms | HARDWARE/SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 70 °C | 260 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | MATTE TIN | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | SOIC | SOP, TSSOP8,.25 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip | ||||||||
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93LC46BT-I/ST
Microchip Technology Inc
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$0.2704 | Yes | Yes | Active | 1.024 kbit | 16 | 64X16 | 3 V | 2 MHz | EEPROM | 1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS | 200 | 1000000 Write/Erase Cycles | 1 | 1 | 64 | 64 words | SYNCHRONOUS | TOTEM POLE | SERIAL | YES | NO | MICROWIRE | 1 µA | 2 µA | 5.5 V | 2.5 V | CMOS | INDUSTRIAL | 6 ms | SOFTWARE | R-PDSO-G8 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 260 | TS 16949 | 40 | 8 | PLASTIC/EPOXY | TSSOP | TSSOP8,.25 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | YES | Matte Tin (Sn) | GULL WING | 650 µm | DUAL | 1.2 mm | 4.4 mm | 3 mm | MICROCHIP TECHNOLOGY INC | SOIC | TSSOP, TSSOP8,.25 | 8 | compliant | EAR99 | 8542.32.00.51 | Microchip |