Parametric results for: 93C66AE/P under EEPROMs

All Filters Additional Feature Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS 1

3 hits Apply

Clock Frequency-Max (fCLK) (2)

1 MHz 2 2 MHz 1

Min (MHz) - Max (MHz)

3 hits Apply

200 2

3 hits Apply

1000000.0 Write/Erase Cycles 2

3 hits Apply

R-PDIP-T8 3

3 hits Apply

e3 3

3 hits Apply

9.27 mm 2 9.46 mm 1

Min (mm) - Max (mm)

3 hits Apply

Manufacturer (1)

Microchip Technology Inc 3

3 hits Apply

Memory Density (1)

4.096 kbit 3

3 hits Apply

EEPROM 3

3 hits Apply

Memory Width (1)

8 3

3 hits Apply

1.0 3

3 hits Apply

1 1

3 hits Apply

8 3

3 hits Apply

512 words 3

3 hits Apply

512.0 3

3 hits Apply

SYNCHRONOUS 3

3 hits Apply

125.0 °C 3

3 hits Apply

-40.0 °C 3

3 hits Apply

Organization (1)

512X8 3

3 hits Apply

TOTEM POLE 1

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

DIP 3

3 hits Apply

DIP8,.3 2

3 hits Apply

RECTANGULAR 3

3 hits Apply

IN-LINE 3

3 hits Apply

Supply Voltage-Nom (Vsup) (2)

2.5 V 2 5 V 1

Min (V) - Max (V)

3 hits Apply