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8M824S50N
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 5 V | 50 ns | SRAM MODULE | COMMON | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 80 mA | 4.5 V | 265 µA | CMOS | COMMERCIAL | R-PDIP-T32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | DIP, DIP32,.6 | not_compliant | EAR99 | 8542.32.00.41 | |||||||||||||
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8M824S25N
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 5 V | 25 ns | SRAM MODULE | COMMON | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 80 mA | 4.5 V | 450 µA | CMOS | COMMERCIAL | R-PDIP-T32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | DIP, DIP32,.6 | not_compliant | EAR99 | 8542.32.00.41 | |||||||||||||
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8M824S60C
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 5 V | 60 ns | SRAM MODULE | COMMON | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 60 mA | 4.5 V | 210 µA | CMOS | COMMERCIAL | R-XDIP-T32 | Not Qualified | e0 | 70 °C | 32 | CERAMIC | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.41 | ||||||||||||||
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IDT8M824S50CB
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 5 V | 50 ns | SRAM MODULE | TTL COMPATIBLE INPUTS/OUTPUTS | COMMON | 1 | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 80 mA | 4.5 V | 265 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-CDMA-T32 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 32 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP32,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||||
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8M824S85N
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 5 V | 85 ns | SRAM MODULE | COMMON | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 60 mA | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.41 | |||||||||||||||
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8M824S85CB
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 5 V | 85 ns | SRAM MODULE | COMMON | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 80 mA | 4.5 V | 265 µA | CMOS | MILITARY | R-XDIP-T32 | Not Qualified | e0 | 125 °C | -55 °C | 38535Q/M;38534H;883B | 32 | CERAMIC | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | DIP, DIP32,.6 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||||||
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8M824S35C
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 5 V | 35 ns | SRAM MODULE | COMMON | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 80 mA | 4.5 V | 265 µA | CMOS | COMMERCIAL | R-XDIP-T32 | Not Qualified | e0 | 1 | 70 °C | 260 | 32 | CERAMIC | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.41 | SB | 32 | SB32 | |||||||||
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8M824S100NB
Integrated Device Technology Inc
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Check for Price | No | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | unknown | EAR99 | 8542.32.00.71 | |||||||||||||||||||||||||||||||||||||||||||||||
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8M824S100N
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 5 V | 100 ns | SRAM MODULE | COMMON | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 60 mA | 4.5 V | CMOS | COMMERCIAL | R-PDIP-T32 | Not Qualified | e0 | 70 °C | 32 | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.41 | |||||||||||||||
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8M824S40CB
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 1.0486 Mbit | 8 | 128KX8 | 5 V | 40 ns | SRAM MODULE | COMMON | 128000 | 131.072 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 80 mA | 4.5 V | 265 µA | CMOS | MILITARY | R-XDIP-T32 | Not Qualified | e0 | 1 | 125 °C | -55 °C | 260 | 38535Q/M;38534H;883B | 32 | CERAMIC | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | DIP, DIP32,.6 | not_compliant | 3A001.A.2.C | 8542.32.00.41 | SB | 32 | SB32 |