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7M1003S65C
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 65 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 65 mA | 4.5 V | 660 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-CDMA-T64 | Not Qualified | e0 | 1 | 70 °C | 260 | 64 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP64,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 9.652 mm | 81.28 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | SB | CERAMIC, SIDEBRAZED, DIP-64 | 64 | SB64 | not_compliant | EAR99 | 8542.32.00.41 | ||||||
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7M1003S50C
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 50 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 65 mA | 4.5 V | 660 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-CDMA-T64 | Not Qualified | e0 | 1 | 70 °C | 260 | 64 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP64,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 9.652 mm | 81.28 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | SB | CERAMIC, SIDEBRAZED, DIP-64 | 64 | SB64 | not_compliant | EAR99 | 8542.32.00.41 | ||||||
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IDT7M1003S30C
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 30 ns | MULTI-PORT SRAM MODULE | SEMAPHORE | COMMON | 1 | 2 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 65 mA | 4.5 V | 660 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-XDMA-T64 | Not Qualified | e0 | 70 °C | 64 | UNSPECIFIED | DIP | DIP64,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.41 | |||||||||||||
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IDT7M1003S40C
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 40 ns | MULTI-PORT SRAM MODULE | SEMAPHORE | COMMON | 1 | 2 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 65 mA | 4.5 V | 660 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-XDMA-T64 | Not Qualified | e0 | 70 °C | 64 | UNSPECIFIED | DIP | DIP64,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.41 | |||||||||||||
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IDT7M1003S35C
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 35 ns | MULTI-PORT SRAM MODULE | SEMAPHORE | COMMON | 1 | 2 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 65 mA | 4.5 V | 660 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-XDMA-T64 | Not Qualified | e0 | 70 °C | 64 | UNSPECIFIED | DIP | DIP64,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | EAR99 | 8542.32.00.41 | |||||||||||||
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7M1003S25C
Integrated Device Technology Inc
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Check for Price | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 25 ns | MULTI-PORT SRAM MODULE | COMMON | 2 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 65 mA | 4.5 V | 660 µA | CMOS | COMMERCIAL | R-XDIP-T64 | Not Qualified | e0 | 70 °C | 64 | CERAMIC | DIP | DIP64,.6 | RECTANGULAR | IN-LINE | NO | Tin/Lead (Sn/Pb) | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | unknown | EAR99 | 8542.32.00.41 | ||||||||||||||||||||
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IDT7M1003S40CB
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 40 ns | MULTI-PORT SRAM MODULE | SEMAPHORE | COMMON | 1 | 2 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 125 mA | 4.5 V | 790 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-XDMA-T64 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B (Modified) | 64 | UNSPECIFIED | DIP | DIP64,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||||||
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IDT7M1003S35CB
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 35 ns | MULTI-PORT SRAM MODULE | SEMAPHORE | COMMON | 1 | 2 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 125 mA | 4.5 V | 790 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-XDMA-T64 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B (Modified) | 64 | UNSPECIFIED | DIP | DIP64,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||||||
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IDT7M1003S50CB
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 50 ns | MULTI-PORT SRAM MODULE | SEMAPHORE | COMMON | 1 | 2 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 125 mA | 4.5 V | 790 µA | 5.5 V | 4.5 V | CMOS | MILITARY | R-XDMA-T64 | Not Qualified | e0 | 125 °C | -55 °C | MIL-STD-883 Class B (Modified) | 64 | UNSPECIFIED | DIP | DIP64,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | INTEGRATED DEVICE TECHNOLOGY INC | not_compliant | 3A001.A.2.C | 8542.32.00.41 | |||||||||||
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7M1003S30C
Integrated Device Technology Inc
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Check for Price | No | No | Obsolete | 524.288 kbit | 8 | 64KX8 | 5 V | 30 ns | MULTI-PORT SRAM | COMMON | 1 | 2 | 64000 | 65.536 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 65 mA | 4.5 V | 660 µA | 5.5 V | 4.5 V | CMOS | COMMERCIAL | R-CDMA-T64 | Not Qualified | e0 | 70 °C | 64 | CERAMIC, METAL-SEALED COFIRED | DIP | DIP64,.6 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | TIN LEAD | THROUGH-HOLE | 2.54 mm | DUAL | 9.652 mm | 81.28 mm | 15.24 mm | INTEGRATED DEVICE TECHNOLOGY INC | DIP, DIP64,.6 | not_compliant | EAR99 | 8542.32.00.41 |